Semiconductor Group
1
Silicon Crossover Ring Quad Schottky Diode
BAT 14-099R
q
Medium barrier diode for double balanced mixers,
phase detectors and modulators
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Maximum Ratings per Diode
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BAT 14-099R
Q62702-A0042
S8
SOT-143
Parameter
Symbol
Values
Unit
Forward current
I
F
90
mA
Power dissipation,
T
S
70 C
P
tot
100
mW
Storage temperature range
T
stg
55 ... + 150
C
Operating temperature range
T
op
55 ... + 150
Thermal Resistance per Diode
Junction ambient
2)
R
th JA
1020
K/W
Junction soldering point
R
th JS
780
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm
16.7 mm to 0.7 mm.
02.96
Semiconductor Group
2
BAT 14-099R
Electrical Characteristics per Diode
at
T
A
= 25 C, unless otherwise specified.
Forward voltage matching
1)
I
F
= 10 mA
V
F
mV
20
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
V
F
V
0.4
0.48
Diode capacitance
V
R
= 0,
f
= 1 MHz
C
T
pF
0.38
Parameter
Symbol
min.
typ.
Unit
Values
max.
Forward resistance
I
F
= 10 mA / 50 mA
R
F
5.5
Forward current
I
F
=
f
(
V
F
)
Forward current
I
F
=
f
(
T
S
;
T
A
*)
*Package mounted on alumina
1)
V
F
is the difference between the lowest and the highest
V
F
in the component.
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