Semiconductor Group
1
Silicon Schottky Diode
BAT 15-098
Preliminary Data
q
DBS mixer application to 10 GHz
q
Low noise figure
q
Low barrier type
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
SOD-123
BAT 15-098
Q62702-A0062
white B
Thermal Resistance
Junction - ambient
2)
R
th JA
770
K/W
Junction - soldering point
R
th JS
690
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
4
V
Forward current
I
F
110
mA
Storage temperature range
T
stg
55 ... + 150
C
Operating temperature range
T
op
55 ... + 150
Power dissipation,
T
S
80 C
P
tot
100
mW
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm
16.7 mm
0.7 mm.
07.94
Semiconductor Group
2
BAT 15-098
Electrical Characteristics per Diode
at
T
A
= 25 C, unless otherwise specified.
Parameter
Symbol
min.
typ.
Unit
Values
max.
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
V
F
0.23
0.32
Forward resistance
I
F
= 10 mA
/
50 mA
R
F
5.5
Diode capacitance
V
R
= 0,
f
= 1 MHz
C
T
pF
0.35
Breakdown voltage
I
R
= 5
A
V
(BR)
V
4
Forward voltage matching
I
F
= 10 mA
V
F
mV
20
Semiconductor Group
4
BAT 15-098
S
11
-Parameters
Typical impedance characteristics (with external bias
I
and
Z
0
=
)
f
I
= 0.02 mA
GHz
MAG ANG
1
2
3
4
5
6
7
8
9
10
0.96
0.95
0.94
0.91
0.88
0.87
0.86
0.89
0.91
0.93
22.19
44.30
68.60
96.40
127.50
165.30
150.50
109.60
75.20
45.10
I
= 0.05 mA
MAG ANG
0.83
0.82
0.80
0.76
0.74
0.72
0.72
0.78
0.84
0.88
24.20
46.30
71.30
100.00
133.50
174.30
141.50
101.70
68.89
41.10
I
= 0.1 mA
MAG ANG
0.71
0.68
0.65
0.61
0.57
0.55
0.60
0.68
0.77
0.83
24.59
46.70
72.30
101.50
138.50
151.30
133.70
94.70
63.90
38.40
I
= 0.2 mA
MAG ANG
0.71
0.68
0.65
0.61
0.57
0.55
0.60
0.68
0.77
0.83
24.59
46.70
72.30
101.50
138.50
151.30
133.70
94.70
63.90
38.40
I
= 0.5 mA
MAG ANG
0.06
0.04
0.03
0.09
0.18
0.29
0.41
0.52
0.61
0.71
36.11
53.72
94.30
122.49
101.50
81.30
65.70
49.50
33.50
19.49
S
11
=
f
(
f
,
I
)
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