Semiconductor Group
1
10.94
Type
Ordering Code
Pin Configuration
Marking
Package
(tape and reel)
1
2
3
4
BAT 63
Q62702-A1004
A1
C2
A2
C1
63
SOT-143
Maximum Ratings
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
3
V
Forward current
I
F
100
mA
Junction temperature
T
j
150
C
Storage temperature range
T
stg
55 ... + 150
C
Thermal Resistance
Junction-ambient
1)
R
th JA
450
K/W
1) Package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm.
Silicon Schottky Diode
BAT 63
q
Low barrier diode for mixer and detectors up to
GHz frequencies
BAT 63
Semiconductor Group
2
Electrical Characteristics
at
T
A
= 25
C, unless otherwise specified.
Parameter
Symbol
Value
Unit
min.
typ.
max.
DC Characteristics
Reverse current
V
R
= 3 V
I
R
10
nA
Forward voltage
I
F
= 1 mA
V
F
190
300
mV
Diode capacitance
V
R
= 0.2 V,
f
= 1 MHz
C
T
0.65
0.85
pF
Case capacitance
C
C
0.1
pF
Differential resistance
V
= 0,
f
= 10 kHz
R
0
30
k
Series inductance
L
S
2
nH
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