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BAR 63-03W
Semiconductor Group
1
Edition A01, 22.07.94
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1 2
Package
1)
BAR 63-03W
G
Q62702-A1025
A
C
SOD-323
Maximum Ratings
Parameter
Symbol
BAR 63-03W
Unit
Reverse voltage
V
R
50
V
Forward current
I
F
100
mA
Total Power dissipation T
S
111C
P
tot
250
mW
Operating temperature range
T
op
-55 +150C
C
Storage temperature range
T
stg
-55...+150C
C
Thermal Resistance
Junction-ambient
1)
R
th JA
235
K/W
Junction-soldering point
R
th JS
155
K/W
_________________________
1)Package mounted on alumina 15mm x 16.7mm x 0.7mm
Silicon PIN Diode
l
PIN diode for high speed switching of RF signals
l
Low forward resistance
l
Very low capacitance
l
For frequencies up to 3 GHz
BAR 63-03W
Semiconductor Group
2
Edition A01, 22.07.94
Electrical Characteristics
at
T
A
= 25
C, unless otherwise specified.
Parameter
Symbol
Value
Unit
min.
typ.
max.
DC Characteristics
Breakdown voltage
I
R
= 5
A
V
(BR)
50
-
-
V
Reverse leakage
V
R
= 20 V
I
R
-
-
50
nA
Forward voltage
I
F
= 100 mA
V
F
-
0.95
1.2
V
Diode capacitance
V
R
= 0 V,
f = 100 MHz
C
T
-
0.3
-
pF
Diode capacitance
V
R
= 5 V,
f = 1 MHz
C
T
-
0.21
0.3
pF
Forward resistance
I
F
= 5 mA,
f = 100 MHz
I
F
= 10 mA,
f = 100 MHz
r
f
-
-
1.2
1
2
-
Charge carrier lifetime
I
F
= 10 mA,
I
R
= 6 mA,
I
R
= 3 mA
L
-
75
-
ns
Series inductance
L
s
-
2.0
-
nH
BAR 63-03W
Semiconductor Group
3
Edition A01, 22.07.94
Diode capacitance
C
T
=
f (V
R
)
f = 1 MHz
Forward resistance
r
f
=
f (I
F
)
f = 100 MHz
Forward current
I
F
=
f
(
T
A
*T
S
)
I
F
T
T
S
A
mA
S
T
A
T
S
BAR 63-03W
Semiconductor Group
4
Edition A01, 22.07.94
Permissible load
R
thJS
=
f (tp)
Permissible load
I
Fmax
/
I
FDC
=
f (t
p
)
R
thJS
K/W
t
p
t
p
I
F
I
F
DC
max
_______