BAT 62-02W
Semiconductor Group
Jul-02-1998
1
Silicon Schottky Diode
Low barrier diode for detectors up to GHz
frequencies
1
VES05991
2
ESD: Electrostatic discharge sensitive device, observe handling precaution
Type
Marking Ordering Code
Pin Configuration
Package
BAT 62-02W
L
Q62702-A1028
1 = C
2 = A
SCD-80
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
40
V
Forward current
I
F
40
mA
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 ...+150
Thermal Resistance
Junction - ambient
1)
R
thJA
650
K/W
Junction - soldering point
R
thJS
810
1) Package mounted on epoxy pcb 15mm x 16.7mm x 0.7mm
Semiconductor Group
1
1998-11-01
BAT 62-02W
Semiconductor Group
Jul-02-1998
2
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 40 V
I
R
-
-
10
A
Forward voltage
I
F
= 2 mA
V
F
-
0.58
1
V
AC characteristics
Diode capacitance
V
R
= 1 V,
f = 1 MHz
C
T
-
0.35
0.6
pF
Case capacitance
f = 1 MHz
C
C
-
0.09
-
Differential resistance
V
R
= 0 ,
f = 10 kHz
R
0
-
225
-
k
Series inductance chip to ground
L
s
-
0.6
-
nH
Semiconductor Group
2
1998-11-01
BAT 62-02W
Semiconductor Group
Jul-02-1998
3
Forward current
I
F
=
f (T
A
*;
T
S
)
* Package mounted on epoxy
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
10
20
30
mA
50
I
F
T
S
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
10
20
30
mA
50
I
F
T
A
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
10
20
30
mA
50
I
F
Permissible Pulse Load
R
thJS
=
f(t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
I
Fmax
/
I
FDC
=
f(t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
-
I
Fmax
/
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group
3
1998-11-01
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