Semiconductor Group
1
Nov-28-1996
BAV 70W
Silicon Switching Diode Array
For high speed switching applications
Common cathode
Type
Marking Ordering Code
Pin Configuration
Package
BAV 70W
A4s
Q62702-A1030
1 = A1
2 = A2
3 = C1/C2 SOT-323
Maximum Ratings per Diode
Parameter
Symbol
Values
Unit
Diode reverse voltage
V
R
70
V
Peak reverse voltage
V
RM
70
Forward current
I
F
200
mA
Surge forward current, t = 1
s
I
FS
4.5
A
Total Power dissipation
T
S
= 103 C
P
tot
250
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
- 65 ... + 150
Thermal Resistance
Junction ambient
1)
R
thJA
460
K/W
Junction - soldering point
R
thJS
190
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm
2
Cu
Semiconductor Group
2
Nov-28-1996
BAV 70W
Electrical Characteristics at
T
A
=25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics per Diode
Breakdown voltage
I
(BR)
= 100 A
V
(BR)
70
-
-
V
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
V
F
-
-
-
-
-
-
-
-
1250
1000
855
715
mV
Reverse current
V
R
= 70 V,
T
A
= 25 C
V
R
= 25 V,
T
A
= 150 C
V
R
= 70 V,
T
A
= 150 C
I
R
-
-
-
-
-
-
50
30
2.5
A
AC characteristics per Diode
Diode capacitance
V
R
= 0 V,
f = 1 MHz
C
D
-
-
1.5
pF
Reverse recovery time
I
F
= 10 mA,
I
R
= 10 mA,
R
L
= 100
t
rr
measured at 1 mA
t
rr
-
-
6
ns
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