BAR 64...
Semiconductor Group
1
Edition A01, 23.02.95
Type
Marking
Ordering code
(tape and reel)
Pin configuration
1 2 3
Package
1)
BAR 64
POs
Q62702-A1041
A
-
C
SOT-23
BAR 64-04
PPs
Q62702-A1010
A
C
C/A
BAR 64-05
PRs
Q62702-A1042
A
A
C/C
BAR 64-06
PSs
Q62702-A1043
C
C
A/A
Maximum ratings per diode
Parameter
Symbol
BAR 64
Unit
Reverse voltage
V
R
200
V
Forward current
I
F
100
mA
Total Power dissipation T
S
90C
BAR64-04,-05,-06 T
S
65C
P
tot
250
250
mW
Junction temperature
T
j
150
C
Operating temperature range
T
op
-55 +150C
C
Storage temperature range
T
stg
-55...+150C
C
Thermal resistance
Junction-ambient
1)
BAR64
BAR64-04,-05,-06
Junction-soldering point
BAR64
BAR64-04,-05,-06
R
th JA
R
th JS
320
500
240
340
K/W
_________________________
1)Package mounted on alumina 15mm x 16.7mm x 0.7mm
Silicon PIN Diode
l
High voltage current controlled
l
RF resistor for RF attenuator and swirches
l
Freqency range above 1 MHz
l
Low resistance and short carrier lifetime
l
For frequencies up to 3 GHz
BAR 64...
Semiconductor Group
2
Edition A01, 23.02.95
Electrical characteristics
at
T
A
= 25
C, unless otherwise specified.
Parameter
Symbol
Value
Unit
min.
typ.
max.
DC characteristics per diode
Breakdown voltage
I
R
= 5
A
V
(BR)
200
-
-
V
Forward voltage
I
F
= 50 mA
V
F
-
-
1.1
V
Diode capacitance
V
R
= 20 V,
f = 1 MHz
C
T
-
0.23
0.35
pF
Forward resistance
I
F
= 1 mA,
f = 100 MHz
I
F
= 10 mA,
f = 100 MHz
I
F
= 100 mA,
f = 100 MHz
r
f
-
--
12.5
2.1
0.85
20
3.8
1.35
Charge carrier lifetime
I
F
= 10 mA,
I
R
= 6 mA,
I
R
= 3 mA
L
-
1.55
-
s
Series inductance
L
s
-
1.4
-
nH
Forward current
r
F
=
f (T
S;
T
A*
)
*
mounted on alumina BAR64
Forward current
r
F
=
f (T
S;
T
A*
)
per each diode BAR64-05,-05,-06
I
F
mA
T
T
A
S
T
T
A
S
I
F
mA
T
T
A
S
T
T
A
S
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