Semiconductor Group
1
Mar-04-1996
BAT 68-03W
Silicon Schottky Diode
Preliminary data
For mixer applications in the VHF/UHF range
For high speed switching
Type
Marking Ordering Code
Pin Configuration
Package
BAT 68-03W K
Q62702-
1 = A
2 = K
SOD-323
Maximum Ratings
Parameter
Symbol
Values
Unit
Diode reverse voltage
V
R
8
V
Forward current
I
F
130
mA
Total Power dissipation
T
S
= 95 C
P
tot
150
mW
Junction temperature
T
j
150
C
Operating temperature range
T
op
- 65 ... + 150
Storage temperature
T
stg
- 65 ... + 150
Thermal Resistance
Junction ambient
1)
R
thJA
445
K/W
Junction - soldering point
R
thJS
365
Q62702-A1046
Semiconductor Group
2
Mar-04-1996
BAT 68-03W
Electrical Characteristics at
T
A
=25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Breakdown voltage
I
(BR)
= 10 A
V
(BR)
8
-
-
V
Reverse current
V
R
= 1 V,
T
A
= 25 C
V
R
= 1 V,
T
A
= 60 C
I
R
-
-
-
-
1.2
0.1
A
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
V
F
340
-
390
318
500
340
mV
Diode capacitance
V
R
= 0 ,
f = 1 MHz
C
T
-
-
1
pF
Differential forward resistance
I
F
= 5 mA
R
F
-
-
10
Forward current
I
F
=
f (T
A
*;
T
S
)
*): mounted on alumina 15mm x 16.7mm x 0.7mm
0
20
40
60
80
100
120 C 150
T
A
,T
S
0
20
40
60
80
100
120
140
160
mA
200
I
F
T
S
T
A
PDF 
ZIP
