ChipFind - документация

Электронный компонент: Q62702-A1066

Скачать:  PDF   ZIP
Semiconductor Group
1
02.96
Type
Ordering Code
Pin Configuration
Marking
Package
1)
(tape and reel)
1
2
3
BAS 40-04W
BAS 40-05W
BAS 40-06W
Q62702-A1065
Q62702-A1066
Q62702-A1067
A1
A1
C1
C1
A2
C2
C1/A2
C1/C2
A1/A2
44s
45s
46s
SOT-323
Maximum Ratings
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
40
V
Forward current
I
F
120
mA
Surge forward current,
t
10 ms
I
FSM
200
mA
Total power dissipation
T
S
106
C
P
tot
250
mW
Junction temperature
T
j
150
C
Operating temperature range
T
op
55 ... + 150
C
Storage temperature range
T
stg
55 ... + 150
C
Thermal Resistance
Junction-ambient
2)
R
th JA
395
K/W
Junction-soldering point
R
th JS
175
K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1 cm
2
Cu.
Silicon Schottky Diode
BAS 40W
q
General-purpose diodes for
high-speed switching
q
Circuit protection
q
Voltage clamping
q
High-level detecting and mixing
BAS 40W
Semiconductor Group
2
Electrical Characteristics
at
T
A
= 25
C, unless otherwise specified.
Parameter
Symbol
Value
Unit
min.
typ.
max.
DC Characteristics
Breakdown voltage
I
(BR)
= 10
A
V
(BR)
40
V
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 15 mA
V
F
250
350
600
310
450
720
380
500
1000
mV
Reverse current
V
R
= 30 V
V
R
= 40 V
I
R


1
10
A
Diode capacitance
V
R
= 0 V,
f
= 1 MHz
C
T
3
5
pF
Charge carrier life time
I
F
= 25 mA
10
ps
Differential forward resistance
I
F
= 10 mA,
f
= 10 kHz
R
F
10
Series inductance
L
S
2
nH
Semiconductor Group
3
BAS 40W
Forward current
I
F
=
f
(
V
F
)
Diode capacitance
C
T
=
f
(
V
R
)
Reverse current
I
R
=
f
(
V
R
)
Differential forward resistance
R
F
=
f
(
I
F
)
Semiconductor Group
4
BAS 40W
Forward current
I
F
=
f
(
T
A
;
T
S
*)
*Package mounted on epoxy
Permissible Pulse load
I
Fmax
/
I
FDC
=
f
(
t
p
)
Permissible load
R
thJS
=
f
(
t
p
)