Semiconductor Group
1
10.94
Type
Ordering Code
Pin Configuration
Marking
Package
1)
(tape and reel)
1
2
3
BAS 70-04W
BAS 70-05W
BAS 70-06W
Q62702-A1068
Q62702-A1069
Q62702-A1070
A1
A1
C1
C2
A2
C2
C1/A2
C1/C2
A1/A2
74s
75s
76s
SOT-323
Maximum Ratings
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
70
V
Forward current
I
F
70
mA
Surge forward current,
t
10 ms
I
FSM
100
mA
Total power dissipation
T
S
91
C
P
tot
250
mW
Operating temperature range
T
op
55 ... + 150
C
Storage temperature range
T
stg
55 ... + 150
C
Thermal Resistance
Junction-ambient
1)
R
th JA
455
K/W
Junction-soldering point
R
th JS
235
K/W
1) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1cm
2
Cu.
Silicon Schottky Diode
BAS 70W
q
General-purpose diodes for
high-speed switching
q
Circuit protection
q
Voltage clamping
q
High-level detection and mixing
Semiconductor Group
2
BAS 70W
Electrical Characteristics
at
T
A
= 25
C, unless otherwise specified.
Parameter
Symbol
Value
Unit
min.
typ.
max.
DC Characteristics
Breakdown voltage
I
(BR)
= 10
A
V
(BR)
70
V
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 15 mA
V
F
300
600
750
375
705
880
410
750
1000
mV
Reverse current
V
R
= 50 V
V
R
= 70 V
I
R
0.1
10
A
Diode capacitance
V
R
= 0 V,
f
= 1 MHz
C
T
1.5
2
pF
Charge carrier life time
I
F
= 25 mA
100
ps
Differential forward resistance
I
F
= 10 mA,
f
= 10 kHz
r
f
34
Series inductance
L
S
2
nH
PDF 
ZIP
