Semiconductor Group
1
05.95
q
General purpose diodes for high-speed switching
q
Circuit protection
q
Voltage clamping
q
High-level detecting and mixing
Type
Ordering Code
Pin Configuration
Marking
Package
(tape and reel)
1
2
BAS 140W
Q62702-A1071
A
C
4
SOD-323
Maximum Ratings
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
40
V
Forward current
I
F
120
mA
Surge forward current,
t
10 ms
I
FSM
200
mA
Total power dissipation
T
S
113
C
P
tot
250
mW
Operating temperature range
T
op
55 ... + 125
C
Storage temperature range
T
stg
55 ... + 150
C
Thermal Resistance
Junction-ambient
1)
R
th JA
260
K/W
Junction-soldering point
R
th JS
150
K/W
1) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1cm
2
Cu.
Silicon Schottky Diode
BAS 140W
Semiconductor Group
2
BAS 140W
Electrical Characteristics
at
T
A
= 25
C, unless otherwise specified.
Parameter
Symbol
Value
Unit
min.
typ.
max.
DC Characteristics
Breakdown voltage
I
(BR)
= 10
A
V
(BR)
40
V
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 15 mA
V
F
250
350
600
310
450
720
380
500
1000
mV
Reverse current
V
R
= 30 V
V
R
= 40 V
I
R
1
10
A
Diode capacitance
V
R
= 0 V,
f
= 1 MHz
C
T
3
5
pF
Differential forward resistance
I
F
= 10 mA,
f
= 10 kHz
R
F
10
Series inductance
L
S
2
nH
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