BAS 170W
Semiconductor Group
1
Edition A01, 11.07.94
ESD: Electrostastic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1 2
Package
1)
BAS 170W
7
Q62702-A1072
A
C
SOD-323
Maximum Ratings
Parameter
Symbol
BAS 170W
Unit
Reverse voltage
V
R
70
V
Forward current
I
F
70
mA
Surge forward current, t
10 ms
I
FSM
100
mA
Total Power dissipation T
S
97C
P
tot
250
mW
Operating temperature range
T
op
-55 +150C
C
Storage temperature range
T
stg
-55...+150C
C
Thermal Resistance
Junction-ambient
1)
R
th JA
320
K/W
Junction-soldering point
R
th JS
210
K/W
_________________________________
1) Package mounted on an epoxy pcb 40mm x 40mm x 1.5mm/1cm2 Cu
Silicon Schottky Diode
l
General-purpose diodes for high-speed switching
l
Circuit protection
l
Voltage clamping
l
High-level detecting and mixing
l
Small package SOD-323
BAS 170W
Semiconductor Group
2
Edition A01, 11.07.94
Electrical Characteristics
at
T
A
= 25
C, unless otherwise specified.
Parameter
Symbol
Value
Unit
min.
typ.
max.
DC Characteristics
Breakdown voltage
I
(BR)
= 10
A
V
(BR)
70
-
-
V
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 15 mA
V
F
300
600
750
375
705
880
410
750
1000
mV
Reverse current
V
R
= 50 V
V
R
= 70 V
I
R
-
-
-
-
0.1
10
A
Diode capacitance
V
R
= 0 V,
f = 1 MHz
C
T
-
1.5
2
pF
Charge carrier life time
I
F
= 25 mA
I
-
-
100
ps
Differential forward resistance
I
F
= 10 mA,
f = 10 kHz
R
F
-
34
-
Series inductance
L
S
-
2
-
nH
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