BAR 80
Semiconductor Group
1
Edition A02, 27.02.95
Type
Marking
Ordering code
(tape and reel)
Pin configuration
1 2 3 4
Package
1)
BAR 80
AAs
Q62702-A1084
C
A
C
A
MW-4
Maximum ratings
Parameter
Symbol
BAR 80
Unit
Reverse voltage
V
R
35
V
Forward current
I
F
100
mA
Operating temperature range
T
op
-55...+125
C
Storage temperature range
T
stg
-55...+150
C
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Silicon RF Switching Diode
l
l
Design for use in shunt configuration
l
Hight shunt signal isolation
l
Low shunt insertion loss
BAR 80
Semiconductor Group
2
Edition A02, 27.02.95
Electrical characteristics
at
T
A
= 25
C, unless otherwise specified.
Parameter
Symbol
Value
Unit
min.
typ.
max.
Reverse current
V
R
= 20 V
I
R
-
-
20
nA
Forward voltage
I
F
= 100 mA
V
F
-
0.92
1
V
Diode capacitance
V
R
= 1 V,
f = 1 MHz
V
R
= 3 V,
f = 1 MHz
C
T
-
0.6
1
0.92
1.6
1.3
pF
Forward resistance
f = 100MHz
I
F
= 5 mA
r
f
-
0.5
0.7
Series inductance to ground
L
s
-
0.14
-
nH
Application information
Shunt signal isolation
I
F
= 10 mA,
f = 2 GHz, R
G
=
R
L
= 50
-
-
23
-
dB
Shunt insertion loss
V
R
= 5 V,
f = 2 GHz, R
G
=
R
L
= 50
IL
-
0.15
-
dB
Configuration of the shunt-diode
-A perfect ground is essential
for optimum isolation
-The anode pins should be used
as passage for RF
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