Semiconductor Group
1
Nov-28-1996
BAV 70S
Silicon Switching Diode Array
For high speed switching applications
Common cathode
Internal (galvanic) isolated Diodes Arrays
in one package
Type
Marking Ordering Code
Pin Configuration
Package
BAV 70S
A4s
Q62702-A1097
1/4=A1
2/5=A2
3/6=C1/2 SOT-363
Maximum Ratings per Diode
Parameter
Symbol
Values
Unit
Diode reverse voltage
V
R
70
V
Peak reverse voltage
V
RM
70
Forward current
I
F
200
mA
Surge forward current, t = 1
s
I
FS
4.5
A
Total Power dissipation
T
S
= 85 C
P
tot
250
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
- 65 ... + 150
Thermal Resistance
Junction ambient
1)
R
thJA
530
K/W
Junction - soldering point
R
thJS
260
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm
2
Cu
Semiconductor Group
2
Nov-28-1996
BAV 70S
Electrical Characteristics at
T
A
=25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics per Diode
Breakdown voltage
I
(BR)
= 100 A
V
(BR)
70
-
-
V
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
V
F
-
-
-
-
-
-
-
-
1250
1000
855
715
mV
Reverse current
V
R
= 70 V,
T
A
= 25 C
V
R
= 25 V,
T
A
= 150 C
V
R
= 70 V,
T
A
= 150 C
I
R
-
-
-
-
-
-
50
30
2.5
A
AC characteristics per Diode
Diode capacitance
V
R
= 0 V,
f = 1 MHz
C
D
-
-
1.5
pF
Reverse recovery time
I
F
= 10 mA,
I
R
= 10 mA,
R
L
= 100
t
rr
measured at 1 mA
t
rr
-
-
6
ns
PDF 
ZIP
