Semiconductor Group
1
Mar-19-1996
BAT 15-03W
Silicon Schottky Diode
DBS mixer applications to 12 GHz
Low noise figure
Low barrier type
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type
Marking Ordering Code
Pin Configuration
Package
BAT 15-03W P/white
Q62702-
1 = A
2 = C
SOD-323
Maximum Ratings
Parameter
Symbol
Values
Unit
Diode reverse voltage
V
R
4
V
Forward current
I
F
100
mA
Total power dissipation
T
S
= 70C
P
tot
100
mW
Operating temperature range
T
op
- 55 ... + 150
C
Storage temperature
T
stg
- 55 ... + 150
Thermal Resistance
Junction ambient
1)
R
thJA
770
K/W
Junction - soldering point
R
thJS
690
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm
2
Cu
Q62702-A1104
Semiconductor Group
2
Mar-19-1996
BAT 15-03W
Electrical Characteristics at
T
A
=25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Breakdown voltage
I
(BR)
= 5 A
V
(BR)
4
-
-
V
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
V
F
-
-
0.32
0.23
0.41
0.32
AC characteristics
Diode capacitance
V
R
= 0 ,
f = 1 MHz
C
T
-
-
0.35
pF
Differential forward resistance
I
F
10mA/ 50 mA
R
F
-
5.5
-
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