Semiconductor Group
1
Feb-26-1996
BAR 81
Preliminary data
Silicon RF Switching Diode
Design for use in shunt configuration
High shunt signal isolation
Low shunt insertion loss
Type
Marking Ordering Code
Pin Configuration
Package
BAR 81
BBs
Q62702-
1 = C
2 = A
3 = C
4 = A
MW-4
Maximum Ratings
Parameter
Symbol
Values
Unit
Diode reverse voltage
V
R
30
V
Forward current
I
F
100
mA
Operating temperature range
T
op
- 55 ... + 125
C
Storage temperature
T
stg
- 55 ... + 150
Q62702-A1145
Semiconductor Group
2
Feb-26-1996
BAR 81
Electrical Characteristics at
T
A
=25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 20 V,
T
A
= 25 C
I
R
-
-
20
nA
Forward voltage
I
F
= 100 mA
V
F
-
0.93
1
V
AC characteristics
Diode capacitance
V
R
= 1 V,
f = 1 MHz
V
R
= 3 V,
f = 1 MHz
C
T
-
-
0.57
0.6
-
-
pF
Forward resistance
I
F
= 5 mA,
f = 100 MHz
r
f
-
0.7
-
Series inductance chip to ground
L
s
-
0.15
-
nH
Semiconductor Group
3
Feb-26-1996
BAR 81
Configuration of the shunt-diode
- A perfect ground is essential for optimum isolation
- The anode pins should be used as passage for RF
Package
PDF 
ZIP