BAT 64...W
Semiconductor Group
Sep-07-1998
1
Silicon Schottky Diodes
For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
Integrated diffused guard ring
Low forward voltage
1
3
VSO05561
2
BAT 64-05W
BAT 64-06W
BAT 64-04W
BAT 64W
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BAT 64W
BAT 64-04W
BAT 64-05W
BAT 64-06W
63s
64s
65s
66s
Q62702-A1159
Q62702-A1160
Q62702-A1161
Q62702-A1162
1 = A
1 = A1
1 = A1
1 = C1
2 n.c.
2 = C2
2 = A2
2 = C2
SOT-323
3 = C
3 = C1/A2
3 = C1/2
3 = A1/2
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
40
V
V
R
Forward current
I
F
mA
250
120
I
FAV
Average forward current (50/60Hz, sinus)
Surge forward current (t
<
100
s)
800
I
FSM
Total power dissipation BAT 64W ,
T
S
120C
P
tot
250
mW
Total power dissipat. BAT64-04/06W ,
T
S
111C
250
P
tot
Total power dissipation BAR 64-05W ,
T
S
104C
P
tot
250
150
C
T
j
Junction temperature
Storage temperature
T
stg
-55...+150
Semiconductor Group
1
1998-11-01
BAT 64...W
Semiconductor Group
Sep-07-1998
2
Thermal Resistance
Junction - ambient
1)
BAT 64W
255
K/W
R
thJA
Junction - ambient
1)
BAT 64-04/06W
290
R
thJA
Junction - ambient
1)
BAT 64-05W
455
R
thJA
R
thJS
Junction - soldering point BAT 64W
120
Junction - soldering point BAT 64-04/06W
R
thJS
155
Junction - soldering point BAT 64-05W
R
thJS
185
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Electrical Characteristics at
T
A
= 25 C, unless otherwise specified.
Parameter
Symbol
Values
Unit
max.
typ.
min.
DC characteristics
2
-
-
A
I
R
Reverse current
V
R
= 30 V
200
-
-
I
R
Reverse current
V
R
= 30 V,
T
A
= 85 C
320
385
440
570
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
-
-
-
-
V
F
350
430
520
750
mV
AC characteristics
Diode capacitance
V
R
= 1 V,
f = 1 MHz
C
T
-
4
6
pF
Semiconductor Group
2
1998-11-01
BAT 64...W
Semiconductor Group
Sep-07-1998
4
Forward current
I
F
=
f (T
A
*;
T
S
)
*Package mounted on epoxy
BAT 64W
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
50
100
150
200
mA
300
I
F
T
S
T
A
Permissible Pulse Load
R
thJS
=
f (t
p
)
BAT 64W
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
I
Fmax
/
I
FDC
=
f (t
p
)
BAT 64W
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
-
I
Fmax
/
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group
4
1998-11-01
BAT 64...W
Semiconductor Group
Sep-07-1998
5
Forward current
I
F
=
f (T
A
*;
T
S
)
* Package mounted on epoxy
BAT 64-04/06W
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
50
100
150
200
mA
300
I
F
T
S
T
A
Permissible Pulse Load
R
thJS
=
f (t
p
)
BAT 64-04/06
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
I
Fmax
/
I
FDC
=
f (t
p
)
BAT 64-04/06W
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
-
I
Fmax
/
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group
5
1998-11-01
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