BAT 60B
Semiconductor Group
Sep-04-1998
1
Silicon Schottky Diode
Rectifier Schottky diode for mobile communication
Low voltage high inductane
For power supply
For clamping and proptection in low voltage
application
For detection and step-up-conversion
VPS05176
1
2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Ordering Code
Pin Configuration
Package
BAT 60B
blue/5
Q62702-A1189
1 = C
2 = A
SOD-323
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
10
V
Forward current
I
F
3
A
Surge forward current (t
<
100
s)
I
FSM
5
mA
Total power dissipation,
T
S
= 28 C
P
tot
1350
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
- 55 ...+150
Maximum Ratings
Junction - ambient
1)
R
thJA
160
K/W
Junction - soldering point
R
thJS
90
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu
Semiconductor Group
1
1998-11-01
BAT 60B
Semiconductor Group
Sep-04-1998
2
Electrical Characteristics at
T
A
= 25 C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 5 V
V
R
= 8 V
-
-
-
-
A
5
10
I
R
Reverse current
V
R
= 5 V,
T
A
= 80 C
V
R
= 8 V,
T
A
= 80 C
I
R
-
-
100
410
-
-
Forward voltage
I
F
= 10 mA
I
F
= 100 mA
I
F
= 1000 mA
V
F
-
-
-
0.24
0.3
0.4
-
-
-
V
AC characteristics
C
T
-
20
-
pF
Diode capacitance
V
R
= 5 V,
f = 1 MHz
Semiconductor Group
2
1998-11-01
BAT 60B
Semiconductor Group
Sep-04-1998
3
Forward current
I
F
=
f (T
A
*;
T
S
)
* Package mounted on epoxy
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
400
800
1200
1600
2000
2400
mA
3200
I
F
T
S
T
A
Reverse current
I
R
=
f (T
A
)
V
R
= 8V
-20
0
20
40
60
80
100 120 C
160
T
A
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
A
I
R
Permissible Pulse Load
R
thJS
=
f(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-1
10
0
10
1
10
2
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
I
Fmax
/
I
FDC
=
f(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
-
I
Fmax
/
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group
3
1998-11-01
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