BAT 165
Semiconductor Group
Sep-04-1998
1
Silicon Schottky Diode
Preliminary data
Low-power Schottky rectifier diode
Miniature plastic package for surface
mounting (SMD)
VPS05176
1
2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Ordering Code
Pin Configuration
Package
BAT 165
White/C
Q62702-A1190
1 = C
2 = A
SOD-323
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
40
V
Forward current
I
F
750
mA
Average forward current (50/60Hz, sinus)
I
FAV
500
Surge forward current (t
<
100
s)
I
FSM
2.5
A
Total power dissipation,
T
S
= 66 C
P
tot
600
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
- 65 ...+150
Maximum Ratings
Junction - ambient
1)
R
thJA
275
K/W
Junction - soldering point
R
thJS
140
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu
Semiconductor Group
1
1998-11-01
BAT 165
Semiconductor Group
Sep-04-1998
2
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Values
Unit
Symbol
typ.
min.
max.
DC characteristics
Reverse current
V
R
= 30 V
I
R
-
-
50
A
Reverse current
V
R
= 30 V,
T
A
= 65 C
-
I
R
-
900
nA
Forward voltage
I
F
= 10 mA
I
F
= 100 mA
I
F
= 250 mA
I
F
= 750 mA
V
F
-
-
-
-
0.305
0.38
0.44
0.58
0.4
-
0.7
-
V
AC characteristics
Diode capacitance
V
R
= 10 V,
f = 1 MHz
C
T
-
8.4
12
pF
Semiconductor Group
2
1998-11-01
BAT 165
Semiconductor Group
Sep-04-1998
3
Forward current
I
F
=
f (T
A
*;
T
S
)
* Package mounted on epoxy
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
100
200
300
400
500
600
mA
800
I
F
T
S
T
A
Permissible Pulse Load
R
thJS
=
f(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
I
Fmax
/
I
FDC
=
f(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
-
I
Fmax
/
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group
3
1998-11-01
PDF 
ZIP