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Электронный компонент: Q62702-A1198

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BAT 62-07W
Semiconductor Group
Sep-07-1998
1
Silicon Schottky Diode
Low barrier diode for detectors up to GHz
frequencies
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution
Type
Marking Ordering Code
Package
Pin Configuration
4=A1
Q62702-A1198
BAT 62-07W
1=C1
2=C2
3=A2
SOT-343
62s
Maximum Ratings
Parameter
Symbol
Unit
Value
V
R
40
Diode reverse voltage
V
20
mA
I
F
Forward current
Total power dissipation,
T
S
= 103 C
P
tot
100
mW
150
C
T
j
Junction temperature
Storage temperature
T
stg
-55 ...+150
Thermal Resistance
K/W
R
thJA
630
Junction - ambient
1)
Junction - soldering point
R
thJS
470
Semiconductor Group
1
1998-11-01
BAT 62-07W
Semiconductor Group
Sep-07-1998
2
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Unit
Values
typ.
max.
min.
DC characteristics
10
A
-
-
I
R
Reverse current
V
R
= 40 V
V
F
-
0.58
1
V
Forward voltage
I
F
= 2 mA
AC characteristics
pF
C
T
Diode capacitance
V
R
= 0 V,
f = 1 MHz
-
0.6
0.35
-
0.1
Case capacitance
f = 1 MHz
-
C
C
225
-
k
-
R
0
Differential resistance
V
R
= 0 ,
f = 10 kHz
2
Series inductance chip to ground
L
s
-
nH
-
Semiconductor Group
2
1998-11-01
BAT 62-07W
Semiconductor Group
Sep-07-1998
3
Forward current
I
F
=
f (T
A
*;
T
S
)
* mounted on alumina
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
5
10
15
mA
25

I
F
T
S
T
A
Forward current
I
F
=
f (V
F
)
T
A
= parameter
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6 V
1.9
V
F
1
10
2
10
3
10
4
10
uA

I
F
T
A
= 25C
T
A
= 85C
T
A
= 125C
T
A
= -40C
Permissiple pulse load
I
Fmax
/
I
FDC
=
f(t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
-

I
Fmax
/
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
I
Fmax
/
I
FDC
=
f(t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
1
10
2
10
3
10
K/W

R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Semiconductor Group
3
1998-11-01
BAT 62-07W
Semiconductor Group
Sep-07-1998
4
Diode capacitance
C
T
= f (V
R
)
f = 1MHz
0
5
10
15
20
V
30
V
R
0.0
0.1
0.2
0.3
0.4
pF
0.6

C
T
Reverse current
I
R
=
f (V
R
)
T
A
= Parameter
0
5
10
15
20
25
30
V
40
V
R
-1
10
0
10
1
10
2
10
3
10
uA

I
R
T
A
= 25C
T
A
= 85C
T
A
= 125C
Rectifier voltage
V
out
=
f (V
in
)
f = 900 MHz
R
L
= parameter in k
10
0
10
1
10
2
10
3
10
4
mV
V
I
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
10
mV

V
O
1000
500
200
100
50
20
R
L
=10
Testcircuit
D.U.T
R
IN
R
L
C
L
1nF
50
V
I
V
0
Semiconductor Group
4
1998-11-01