BAT 68-07W
Semiconductor Group
Sep-09-1998
1
Silicon Schottky Diodes
For mixer applications in the VHF / UHF range
For high-speed switching applications
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BAT 68-07W
87
Q62702-A1200
1 = C1 2 = C2
SOT-343
3 = A2 4 = A1
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
8
V
Forward current
I
F
130
mA
Total power dissipation,
T
S
= 89 C
P
tot
150
mW
Junction temperature
T
j
150
C
Operating temperature range
C
-65...+150
T
op
Storage temperature
T
stg
- 65 ...+150
C
Maximum Ratings
Junction - ambient
1)
R
thJA
570
K/W
Junction - soldering point
R
thJS
410
1) Package mounted on alumina 15mm x 17.6mm x 0.7mm
Semiconductor Group
1
1998-11-01
BAT 68-07W
Semiconductor Group
Sep-09-1998
2
Electrical Characteristics at
T
A
= 25 C, unless otherwise specified.
Parameter
Values
Symbol
Unit
max.
min.
typ.
DC characteristics
V
(BR)
8
Breakdown voltage
I
(BR)
= 10 A
-
-
V
I
R
A
-
Reverse current
V
R
= 1 V
0.1
-
Reverse current
V
R
= 1 V,
T
A
= 60 C
I
R
-
-
1.2
nA
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
V
F
-
340
318
390
340
500
mV
AC characteristics
Diode capacitance
V
R
= 1 V,
f = 1 MHz
C
T
-
-
1
pF
Differential forward resistance
I
F
= 5 mA,
f = 10 kHz
r
f
-
-
10
Semiconductor Group
2
1998-11-01
BAT 68-07W
Semiconductor Group
Sep-09-1998
3
Forward current
IF = f (T
A
*;
T
S
)
* Package mounted on alumina
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
10
20
30
40
50
60
70
80
90
100
110
120
mA
140
I
F
T
S
T
A
Permissible Pulse Load
R
thJS
=
f(t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
I
Fmax
/
I
FDC
=
f(t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
-
I
Fmax
/
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group
3
1998-11-01
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