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Электронный компонент: Q62702-A1202

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SMBT 3906S
Semiconductor Group
Sep-07-1998
1
PNP Silicon Switching Transistor Array
High DC current gain: 0.1mA to 100mA
Low collector-emitter saturation voltage
Two ( galvanic) internal isolated Transistors
with high matching in one package
Complementary type: SMBT 3904S (NPN)
VPS05604
6
3
1
5
4
2
Type
Marking Ordering Code
Package
Pin Configuration
1/4=E1/E2
s2A
SMBT 3906S
2/5=B1/B2 3/6=C2/C1 SOT-363
Q62702-A1202
Maximum Ratings
Unit
Parameter
Symbol
Value
Collector-emitter voltage
V
CEO
V
40
40
Collector-base voltage
V
CBO
Emitter-base voltage
6
V
EBO
DC collector current
I
C
mA
200
250
mW
Total power dissipation,
T
S
= 115 C
P
tot
C
T
j
Junction temperature
150
Storage temperature
T
stg
- 65...+150
Thermal Resistance
Junction ambient
1)
R
thJA
275
K/W
Junction - soldering point
R
thJS
140
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu
Semiconductor Group
1
1998-11-01
SMBT 3906S
Semiconductor Group
Sep-07-1998
2
Electrical Characteristics at
T
A
=25C, unless otherwise specified.
Parameter
Symbol
Unit
Values
typ.
max.
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR)CEO
V
40
-
-
Collector-base breakdown voltage
I
C
= 10 A,
I
B
= 0
V
(BR)CBO
40
-
-
V
(BR)EBO
-
-
5
Emitter-base breakdown voltage
I
E
= 10 A,
I
C
= 0
Collector cutoff current
V
CB
= 30 V,
I
E
= 0
nA
I
CBO
-
-
50
DC current gain 1)
I
C
= 100 A,
V
CE
= 1 V
I
C
= 1 mA,
V
CE
= 1 V
I
C
= 10 mA,
V
CE
= 1 V
I
C
= 50 mA,
V
CE
= 1 V
I
C
= 100 mA,
V
CE
= 1 V
h
FE
60
80
100
60
30
-
-
-
-
-
-
-
300
-
-
-
Collector-emitter saturation voltage1)
I
C
= 10 mA,
I
B
= 1 mA
I
C
= 50 mA,
I
B
= 5 mA
V
CEsat
-
-
-
-
0.25
0.4
V
Base-emitter saturation voltage 1)
I
C
= 10 mA,
I
B
= 1 mA
I
C
= 50 mA,
I
B
= 5 mA
V
BEsat
0.65
-
-
-
0.85
0.95
1) Pulse test: t < 300
s; D < 2%
Semiconductor Group
2
1998-11-01
SMBT 3906S
Semiconductor Group
Sep-07-1998
3
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Values
Symbol
Unit
max.
typ.
min.
AC Characteristics
f
T
250
-
MHz
-
Transition frequency
I
C
= 10 mA,
V
CE
= 5 V,
f = 100 MHz
C
cb
-
-
Collector-base capacitance
V
CB
= 10 V,
f = 1 MHz
pF
4.5
C
eb
-
-
10
Emitter-base capacitance
V
EB
= 0.5 V,
f = 1 MHz
h
11e
2
12
-
Short-circuit input impedance
I
C
= 2 mA,
V
CE
= 5 V,
f = 1 kHz
k
h
12e
0.1
10
10
-4
-
Open-circuit reverse voltage transfer ratio
I
C
= 2 mA,
V
CE
= 5 V,
f = 1 kHz
h
21e
100
-
Short-circuit forward current transfer ratio
I
C
= 2 mA,
V
CE
= 5 V,
f = 1 kHz
-
400
h
22e
3
-
60
s
Open-circuit output admittance
I
C
= 2 mA,
V
CE
= 5 V,
f = 1 kHz
Noise figure
I
C
= 100 A,
V
CE
= 5 V,
R
S
= 1 k
,
f = 1 kHz,
f = 200 Hz
F
-
-
4
dB
Delay time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
= 1 mA,
V
BE(off)
= 0.5 V
t
d
-
-
35
ns
Rise time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
= 1 mA,
V
BE(off)
= 0.5 V
t
r
-
-
35
Storage time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
=
I
B2
= 1mA
t
stg
-
-
225
Fall time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
=
I
B2
=
1mA
t
f
-
-
75
Semiconductor Group
3
1998-11-01
SMBT 3906S
Semiconductor Group
Sep-07-1998
4
Test circuit

Delay and rise time
EHN00059
275
10
-3.0 V
0
+0.5 V
<4.0
C
-10.6 V
D
= 2%
300
<1.0
pF
k
ns
ns
Storage time and fall time
EHN00060
275
10
-3.0 V
0
+9.1 V
<4.0 pF
C
-10.9 V
D = 2%
1N916
<1.0 ns
t
1
s
500
10
t
1
k
< <
Semiconductor Group
4
1998-11-01
SMBT 3906S
Semiconductor Group
Sep-07-1998
5
Total power dissipation
P
tot
=
f (T
A
*;
T
S
)
* Package mounted on epoxy
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
50
100
150
200
mW
300

P
tot
Kein
T
A
T
S
Permissible Pulse Load
R
thJS
=
f (t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W

R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
P
totmax
/
P
totDC
=
f (t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
3
10
-

P
totmax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group
5
1998-11-01