BA 892
Semiconductor Group
Au -03-1998
1
Silicon Rf Switching Diode
Preliminary data
For VHF band switching
in TV / VTR tuners
Low forward resistance,
small capacitance,
small inductance
1
VES05991
2
Type
Marking
Ordering Code
Pin Configuration
Package
BA 892
A
Q62702-A1214
1 = C
2 = A
SCD-80
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
35
V
V
R
Forward current
mA
I
F
100
-55 ...+125
C
Operating temperature range
T
op
Storage temperature
T
stg
-55 ...+150
Thermal Resistance
K/W
Junction - ambient
1)
R
thJA
450
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group
1
1998-11-01
BA 892
Semiconductor Group
Au -03-1998
2
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Values
Unit
Symbol
min.
max.
typ.
DC characteristics
I
R
-
-
A
Reverse current
V
R
= 20 V
20
V
F
-
-
1
V
Forward voltage
I
F
= 100 mA
AC characteristics
pF
C
T
Diode capacitance
V
R
= 1 V,
f = 1 MHz
V
R
= 3 V,
f = 1 MHz
0.92
0.85
1.3
1.1
0.65
0.6
Forward resistance
I
F
= 3 mA,
f = 100 MHz
I
F
= 10 mA,
f = 100 MHz
-
-
0.45
0.36
r
f
0.7
0.5
k
Reverse resistance
V
R
= 1 V,
f = 100 MHz
1/
g
p
-
100
-
nH
Series inductance
L
s
-
0.6
-
Semiconductor Group
2
1998-11-01
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