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Электронный компонент: Q62702-A1216

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BAR 65-02W
Semiconductor Group
Jun-18-1998
1
Silicon RF Switching Diode
Preliminary data
Low loss, low capacitance PIN-diode
Band switch for TV-tuners
Series diode for mobile communication
transmit-receiver switch
1
VES05991
2
Type
Marking
Ordering Code
Pin Configuration
Package
BAR 65-02W
N
Q62702-A1216
1 = C
2 = A
SCD-80
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
V
R
30
Forward current
I
F
100
mA
Operating temperature range
C
T
op
- 55 ...+125
- 55 ...+150
Storage temperature
T
stg
Semiconductor Group
1
1998-11-01
BAR 65-02W
Semiconductor Group
Jun-18-1998
2
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Values
Symbol
Unit
max.
typ.
min.
DC characteristics
Reverse current
V
R
= 20 V
I
R
-
-
20
nA
Forward voltage
I
F
= 100 mA
-
0.93
V
1
V
F
AC characteristics
pF
Diode capacitance
V
R
= 1 V,
f = 1 MHz
V
R
= 3 V,
f = 1 MHz
0.6
0.57
-
-
C
T
0.9
0.8
Forward resistance
I
F
= 5 mA,
f = 100 MHz
I
F
= 10 mA,
f = 100 MHz
r
f
-
-
0.65
0.56
0.95
0.9
Series inductance
L
s
-
0.6
-
nH
Semiconductor Group
2
1998-11-01
BAR 65-02W
Semiconductor Group
Jun-18-1998
3
Forward current
I
F
=
f (V
F
)
T
A
= 25C
400
500
600
700
800
mV
1000
V
F
-1
10
0
10
1
10
2
10
3
10
mA
I
F
Forward resistance
r
f
=
f(I
F
)
f = 100MHz
10
-1
10
0
mA
I
F
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
Ohm
3.0
R
F
Diode capacitance
C
T
= f (V
R
)
f = 1MHz
0
1
2
3
4
5
6
7
8
V
10
V
R
0.2
0.3
0.4
0.5
0.6
0.7
0.8
pF
1.0
C
T
Diode capacitance
C
T
= f (V
R
)
f = 100MHz
0
1
2
3
4
5
6
7
8
V
10
V
R
0.2
0.3
0.4
0.5
0.6
0.7
0.8
pF
1.0
C
T
Semiconductor Group
3
1998-11-01