BAT 240A
Semiconductor Group
Sep-09-1998
1
Silicon Schottky Diode
Preliminary data
Rectifier Schottky diode for modem applications
High reverse voltage
For power supply
For clamping and protection in all
high voltage applications
1
2
3
VPS05161
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BAT 240A
4Ms
Q62702-A1234
1=C1/A2 2 = C2
SOT-23
3 = A1
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
240
V
Peak reverse voltage
V
RM
V
250
Forward current
I
F
400
mA
Surge forward current (t
10ms)
I
FSM
1
A
Total power dissipation,
T
S
= 28 C
P
tot
400
mW
Junction temperature
T
j
80
C
Storage temperature
T
stg
- 55 ...+150
Maximum Ratings
Junction - ambient
1)
R
thJA
465
K/W
Junction - soldering point
R
thJS
305
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu
Semiconductor Group
1
1998-11-01
BAT 240A
Semiconductor Group
Sep-09-1998
2
Electrical Characteristics at
T
A
= 25 C, unless otherwise specified.
Parameter
Symbol
Unit
Values
typ.
max.
min.
DC characteristics
Breakdown voltage
I
(BR)
= 500 A
V
(BR)
240
-
V
-
Reverse current
V
R
= 200 V
V
R
= 240
I
R
-
-
5
-
-
50
A
Forward voltage
I
F
= 10 mA
I
F
= 20 mA
I
F
= 50 mA
V
F
-
-
-
0.325
0.37
0.47
-
-
-
V
AC characteristics
Diode capacitance
V
R
= 10 V,
f = 1 MHz
C
T
-
11.5
-
pF
Semiconductor Group
2
1998-11-01
BAT 240A
Semiconductor Group
Sep-09-1998
3
Forward current
I
F
=
f (T
A
*;
T
S
)
* Package mounted on epoxy
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
50
100
150
200
250
300
350
400
mA
500
I
F
T
S
T
A
Permissible Pulse Load
R
thJS
=
f(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
I
Fmax
/
I
FDC
=
f(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
3
10
-
I
Fmax
/
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group
3
1998-11-01
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