BAS 16-02W
Semiconductor Group
Jul-24-1998
1
Silicon Switching Diode
Preliminary data
For high-speed switching applications
1
VES05991
2
Type
Marking
Ordering Code
Pin Configuration
Package
BAS 16-02W
3
Q62702-A1239
1 = A
2 = C
SCD-80
Maximum Ratings
Parameter
Symbol
Unit
Value
Diode reverse voltage
V
R
75
V
Peak reverse voltage
V
RM
85
Forward current
I
F
mA
250
I
FS
2.5
Surge forward current, t = 1
s
A
mW
P
tot
Total power dissipation,
T
S
= 119 C
100
Junction temperature
150
C
T
j
T
stg
- 65 ...+150
Storage temperature
Semiconductor Group
1
1998-11-01
BAS 16-02W
Semiconductor Group
Jul-24-1998
2
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Unit
Values
min.
max.
typ.
DC characteristics
-
V
Breakdown voltage
I
(BR)
= 100 A
75
V
(BR)
-
715
855
1000
1250
mV
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
-
-
-
-
V
F
-
-
-
-
1
A
-
Reverse current
V
R
= 70 V
-
I
R
30
50
Reverse current
V
R
= 25 V,
T
A
= 150 C
V
R
= 75 V,
T
A
= 150 C
I
R
nA
-
-
-
-
-
1.75
V
fr
Forward recovery voltage
I
F
= 10 mA,
t
p
= 20 ns
V
-
AC characteristics
2
pF
C
D
-
Diode capacitance
V
R
= 0 V,
f = 20 MHz
-
ns
t
rr
-
-
Reverse recovery time
I
F
= 10 mA,
I
R
= 10 mA,
R
L
= 100
,
measured at
I
R
= 1mA
6
Test circuit for reverse recovery time
EHN00016
F
D.U.T.
Oscillograph
Pulse generator:
t
p
= 100ns,
D = 0.05,
t
r
= 0.6ns,
R
i
= 50
Oscillograph:
R = 50
,
t
r
= 0.35ns,
C
1pF
Semiconductor Group
2
1998-11-01
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