BAS 16S
Semiconductor Group
Apr-24-1998
1
Silicon Switching Diode Array
For high-speed switching applications
Internal (galvanic) isolated Diodes
in one package
Tape loading orientation
VPS05604
6
3
1
5
4
2
Type
Marking Ordering Code Pin Configuration
Package
BAS 16S
A6s
Q62702-A1241 1=A1 2=A2
3=A3
SOT-363
4=C3 5=C2 6=C1
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
75
V
Peak reverse voltage
V
RM
85
Forward current
I
F
200
mA
Surge forward current, t = 1
s
I
FS
4.5
A
Total power dissipation,
T
S
= 85 C
P
tot
250
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
65 ...+150
Thermal Resistance
Junction - ambient
1)
R
thJA
530
K/W
Junction - soldering point
R
thJS
260
K/W
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group
1
1998-11-01
BAS 16S
Semiconductor Group
Apr-24-1998
2
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Breakdown voltage
I
(BR)
= 100 A
V
(BR)
75
-
-
V
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
V
F
-
-
-
-
-
-
-
-
715
855
1000
1250
mV
Reverse current
V
R
= 70 V
I
R
-
-
2.5
A
Reverse current
V
R
= 25 V,
T
A
= 150 C
V
R
= 70 V,
T
A
= 150 C
I
R
-
-
-
-
30
50
nA
AC characteristics
Diode capacitance
V
R
= 0 V,
f
= 1 MHz
C
D
-
-
2
pF
Reverse recovery time
I
F
= 10 mA,
I
R
= 10 mA,
R
L
= 100
,
measured at
I
R
= 1mA
t
rr
-
-
6
ns
Test circuit for reverse recovery time
EHN00016
F
D.U.T.
Oscillograph
Pulse generator:
t
p
= 100ns,
D = 0.05,
t
r
= 0.6ns,
R
i
= 50
Oscillograph:
R = 50
,
t
r
= 0.35ns,
C
1pF
Semiconductor Group
2
1998-11-01
BAS 16S
Semiconductor Group
Apr-24-1998
3
Forward current
I
F
=
f (T
A
*;
T
S
)
* Package mounted on epoxy
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
50
100
150
200
mA
300
I
F
5
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
50
100
150
200
mA
300
I
F
T
S
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
50
100
150
200
mA
300
I
F
T
A
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
50
100
150
200
mA
300
I
F
Forward current
I
F
=
f V
F
)
T
A
= 25C
0
0
EHB00023
BAS 16
0.5
1.0
V
1.5
50
100
mA
150
F
F
V
max
typ
Permissible Pulse Load
R
thJS
=
f(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
I
Fmax
/
I
FDC
=
f(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
-
I
Fmax
/
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group
3
1998-11-01
PDF 
ZIP