SMBTA 42M
Semiconductor Group
Jun-18-1997
1
NPN Silicon High-Voltage Transistor
High breakdown voltage
Low collector-emitter saturation voltage
Complementary type: SMBTA 92M (PNP)
VPW05980
1
2
3
5
4
Type
Marking Ordering Code
Package
Pin Configuration
4=n.c. 5 = C
s1D
SMBTA 42M
1 = B 2 = C 3 = E
SCT-595
Q62702-A1243
Maximum Ratings
Parameter
Symbol
Unit
Value
V
V
CEO
300
Collector-emitter voltage
Collector-base voltage
V
CBO
300
6
Emitter-base voltage
V
EBO
mA
DC collector current
500
I
C
100
Base current
I
B
Total power dissipation,
T
S
83 C
P
tot
W
1.5
150
C
Junction temperature
T
j
Storage temperature
T
stg
- 65...+150
Thermal Resistance
Junction ambient
1)
R
thJA
100
K/W
Junction - soldering point
R
thJS
45
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Semiconductor Group
1
1998-11-01
SMBTA 42M
Semiconductor Group
Jun-18-1997
2
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Unit
Values
typ.
max.
min.
DC characteristics
V
(BR)CEO
300
Collector-emitter breakdown voltage
I
C
= 100 A,
I
B
= 0
-
V
-
V
(BR)CBO
300
Collector-base breakdown voltage
I
C
= 10 A,
I
B
= 0
-
-
V
(BR)EBO
6
-
Emitter-base breakdown voltage
I
E
= 10 A,
I
C
= 0
-
I
CBO
-
100
Collector cutoff current
V
CB
= 200 V,
I
E
= 0
nA
-
I
CBO
-
-
Collector-base cutoff current
V
CB
= 200 V,
T
A
= 150 C
20
A
-
-
100
I
EBO
Emitter cutoff current
V
EB
= 3 V,
I
C
= 0
nA
DC current gain 1)
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
I
C
= 30 mA,
V
CE
= 10 V
h
FE
25
40
40
-
-
-
-
-
-
-
Collector-emitter saturation voltage1)
I
C
= 20 mA,
I
B
= 2 mA
V
CEsat
-
-
0.5
V
Base-emitter saturation voltage 1)
I
C
= 20 mA,
I
B
= 2 mA
V
BEsat
-
-
0.9
AC Characteristics
-
-
Transition frequency
I
C
= 10 mA,
V
CE
= 20 V,
f = 100 MHz
f
T
MHz
50
-
Collector-base capacitance
V
CB
= 20 V,
f = 1 MHz
C
cb
3
pF
-
1) Pulse test: t < 300
s; D < 2%
Semiconductor Group
2
1998-11-01
SMBTA 42M
Semiconductor Group
Jun-18-1997
3
Total power dissipation
P
tot
=
f (T
A
*;
T
S
)
* Package mounted on epoxy
0
20
40
60
80
100
120
s
150
t
p
0
200
400
600
800
1000
1200
1400
mW
1800
P
tot
T
S
T
A
DC current gain
h
FE
=
f (I
C
)
V
CE
= 10V
EHP00844
SMBTA 42/43
10
10
mA
h
C
10
5
FE
10
3
1
10
0
5
10
10
10
-1
0
1
2
3
5
10
2
5
5
5
Permissible Pulse Load
R
thJS
=
f (t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-1
10
0
10
1
10
2
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
P
totmax
/
P
totDC
=
f (t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
0
10
1
10
2
10
3
10
-
P
totmax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group
3
1998-11-01
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