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Электронный компонент: Q62702-A1261

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BAR 63 ... W
Semiconductor Group
Sep-07-1998
1
Silicon PIN Diode
PIN diode for high speed
switching of RF signal
Low forward resistance
Very low capacitance
For frequencies up to 3 GHz
1
3
VSO05561
2
BAR 63-04W
BAR 63-05W
BAR 63-06W
Marking Ordering Code
Pin Configuration
Package
Type
3=C1/A2
3 = C1/2
3 = A1/2
SOT-323
2 = C2
2 = A2
2 = C2
BAR 63-04W
BAR 63-05W
BAR 63-06W
Q62702-A1261
Q62702-A1267
Q62702-A1268
1 = A1
1 = A1
1 = C1
G4s
G5s
G6s
Maximum Ratings
Unit
Parameter
Symbol
Value
Diode reverse voltage
V
R
V
50
100
mA
I
F
Forward current
Total power dissipation,
T
S
105 C
P
tot
mW
250
150
Junction temperature
T
j
C
T
op
Operating temperature range
- 55 ...+150
Storage temperature
T
stg
- 55 ...+150
Thermal Resistance
K/W
R
thJA
340
Junction - ambient
1)
Junction - soldering point
R
thJS
180
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group
1
1998-11-01
BAR 63 ... W
Semiconductor Group
Sep-07-1998
2
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Unit
Parameter
Values
Symbol
min.
max.
typ.
DC characteristics
-
50
V
(BR)
Breakdown voltage
I
(BR)
= 5 A
V
-
50
Reverse current
V
R
= 20 V
I
R
A
-
-
1.2
Forward voltage
I
F
= 100 mA
-
V
F
mV
0.95
AC characteristics
-
0.3
pF
0.3
0.21
C
T
-
-
Diode capacitance
V
R
= 0 V,
f = 100 MHz
V
R
= 5 V,
f = 1 MHz
2
-
1.2
1
Forward resistance
I
F
= 5 mA,
f = 100 MHz
I
F
= 10 mA,
f = 100 MHz
-
-
r
f
-
Charge carrier life time
I
F
= 10 mA,
I
R
= 6 mA,
I
R
= 3 mA
rr
s
75
-
-
Series inductance
-
L
s
nH
1.4
Semiconductor Group
2
1998-11-01
BAR 63 ... W
Semiconductor Group
Sep-07-1998
3
Forward current
I
F
=
f (T
A
*;
T
S
)
* mounted on alumina
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
10
20
30
40
50
60
70
80
90
100
mA
120
I
F
T
S
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
10
20
30
40
50
60
70
80
90
100
mA
120
I
F
T
A
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
10
20
30
40
50
60
70
80
90
100
mA
120
I
F
Permissible Pulse Load
I
Fmax
/
I
FDC
=
f(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
3
10
-
I
Fmax
/
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
R
thJS
=
f(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
3
10
K/W

R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Semiconductor Group
3
1998-11-01
BAR 63 ... W
Semiconductor Group
Sep-07-1998
4
Diode capacitance
C
T
=
f (V
R
)
f = 1MHz
V
EHD07139
R
T
C
0
0
V
pF
0.1
0.2
0.3
0.4
0.5
10
20
30
Forward resistance
r
f
=
f (I
F
)
f = 100MHz
EHD07138
F
f
r
10
-2
-1
10
mA
10
-1
10
0
10
1
10
2
10
2
10
0
10
1
Semiconductor Group
4
1998-11-01