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Электронный компонент: Q62702-A1266

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BAR 64 ... W
Semiconductor Group
Sep-04-1998
1
Silicon PIN Diode
High voltage current controlled
RF resistor for RF attenuator and switches
Frequency range above 1 MHz
Low resistance and short carrier lifetime
For frequencies up to 3 GHz
1
3
VSO05561
2
BAR 64-04W
BAR 64-05W
BAR 64-06W
Type
Marking Ordering Code
Pin Configuration
Package
BAR 64-04W
BAR 64-05W
BAR 64-06W
PPs
PRs
PSs
Q62702-A1264
Q62702-A1265
Q62702-A1266
1 = A1
1 = A1
1 = C1
2 = C2
2 = C2
2 = C2
SOT-323
3=C1/A2
3 = C1/2
3 = A1/2
Maximum Ratings
Parameter
Symbol
Unit
Value
V
V
R
200
Diode reverse voltage
Forward current
I
F
100
mA
mW
Total power dissipation,
T
S
115 C
P
tot
250
T
j
150
C
Junction temperature
- 55 ...+150
Operating temperature range
T
op
Storage temperature
T
stg
- 55 ...+150
Thermal Resistance
R
thJA
300
Junction - ambient
1)
K/W
R
thJS
140
Junction - soldering point
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group
1
1998-11-01
BAR 64 ... W
Semiconductor Group
Sep-04-1998
2
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Values
Symbol
Unit
max.
typ.
min.
DC characteristics
Breakdown voltage
I
(BR)
= 5 A
-
V
-
200
V
(BR)
-
-
50
I
R
Reverse current
V
R
= 20 V
A
Forward voltage
I
F
= 50 mA
V
F
-
1.1
mV
-
AC characteristics
Diode capacitance
V
R
= 20 V,
f = 1 MHz
-
C
T
0.23
pF
0.35
Forward resistance
I
F
= 1 mA,
f = 100 MHz
I
F
= 10 mA,
f = 100 MHz
I
F
= 100 mA,
f = 100 MHz
20
2.8
1.35
r
f
12.5
2.1
0.85
-
-
-
Charge carrier life time
I
F
= 10 mA,
I
R
= 6 mA,
I
R
= 3 mA
-
-
s
1.55
rr
-
Series inductance
-
L
s
nH
1.2
Semiconductor Group
2
1998-11-01
BAR 64 ... W
Semiconductor Group
Sep-04-1998
3
Forward current
I
F
=
f (T
A
*;
T
S
)
* mounted on alumina
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
20
40
60
80
100
mA
140

I
F
5
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
20
40
60
80
100
mA
140

I
F
T
S
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
20
40
60
80
100
mA
140

I
F
T
A
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
20
40
60
80
100
mA
140

I
F
Permissible Pulse Load
R
thJS
=
f(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W

R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
I
Fmax
/
I
FDC
=
f(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
s
t
p
0
10
1
10
2
10
-

I
Fmax
/
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group
3
1998-11-01
BAR 64 ... W
Semiconductor Group
Sep-04-1998
4
Diode capacitance
C
T
= f (V
R
)
f = 1MHz
0
5
10
15
20
V
30
V
R
0.0
0.1
0.2
0.3
0.4
pF
0.6

C
T
Forward resistance
r
f
=
f(I
F
)
f = 100MHz
10
-2
10
-1
10
0
10
1
10
2
10
3
mA
I
F
-1
10
0
10
1
10
2
10
3
10
Ohm

R
F
Forward current
I
F
=
f (V
F
)
T
A
= parameter
0.0
0.1 0.2
0.3 0.4
0.5 0.6
0.7 0.8
V
1.0
V
F
-2
10
-1
10
0
10
1
10
2
10
3
10
mA

I
F
Intermodulation intersept point
IP
3
=
f (I
F
)
f = parameter
10
-1
10
0
10
1
mA
I
F
1
10
2
10
dBm

IP
3
5
10
-1
10
0
10
1
mA
I
F
1
10
2
10
dBm

IP
3
f=1800MHz
f=900MHz
Semiconductor Group
4
1998-11-01