BAR 81W
Semiconductor Group
Sep-04-1998
1
Silicon RF Switching Diode
Preliminary data
Design for use in shunt configuration
High shunt signal isolation
Low shunt insertion loss
VPS05605
4
2
1
3
Type
Marking Ordering Code
Package
Pin Configuration
Q62702-A1270
4 = C1
3 = A2
BAR 81W
1 = A1 2 = C2
SOT-343
BBs
Maximum Ratings
Symbol
Value
Unit
Parameter
Diode reverse voltage
V
R
V
30
I
F
100
mA
Forward current
mW
100
Total power dissipation,
T
S
= 138 C
P
tot
Junction temperature
T
j
C
150
Operating temperature range
-55 ...+125
C
T
op
T
stg
Storage temperature
-55 ...+150
Thermal Resistance
Junction - ambient
1)
200
R
thJA
K/W
120
Junction - soldering point
R
thJS
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group
1
1998-11-01
BAR 81W
Semiconductor Group
Sep-04-1998
2
Electrical Characteristics at
T
A
= 25 C, unless otherwise specified.
Parameter
Values
Symbol
Unit
typ.
max.
min.
Characteristics
-
-
nA
I
R
Reverse current
V
R
= 20 V
20
0.93
V
F
1
V
Forward voltage
I
F
= 100 mA
-
AC characteristics
Diode capacitance
V
R
= 1 V,
f = 1 MHz
V
R
= 3 V,
f = 1 MHz
C
T
-
-
0.6
0.57
-
-
pF
Forward resistance
I
F
= 5 mA,
f = 100 MHz
r
f
-
0.7
-
0.15
-
nH
Series inductance
L
s
-
Configuration of the shunt-diode
- A perfect ground is essential for optimum isolation
- The anode pins should be used as passage for RF
Semiconductor Group
2
1998-11-01
BAR 81W
Semiconductor Group
Sep-04-1998
3
Forward current
I
F
=
f (T
A
*;
T
S
)
*): mounted on alumina 15mm x 16.7mm x 0.7mm
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
10
20
30
40
50
60
70
80
90
100
mA
120
I
F
T
S
T
A
Permissible Pulse Load
I
Fmax
/
I
FDC
=
f(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
-
I
Fmax
/
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
R
thJS
=
f(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Semiconductor Group
3
1998-11-01
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