BAT 17W
Semiconductor Group
Sep-04-1998
1
Silicon Schottky Diodes
For mixer applications in the VHF / UHF range
For high-speed switching applications
1
3
VSO05561
2
BAT 17-05W
BAT 17-06W
BAT 17W
BAT 17-04W
Type
Marking Ordering Code
Pin Configuration
Package
BAT 17W
BAT 17-04W
BAT 17-05W
BAT 17-06W
53s
54s
55s
56s
Q62702-A1271
Q62702-A1272
Q62702-A1273
Q62702-A1274
1 = A
1 = A1
1 = A1
3 = C1
2 n.c.
2 = C2
2 = A2
2 = C2
SOT-323
3 = C
3 = C1/A2
3 = C1/2
3 = A1/2
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
4
V
Forward current
I
F
130
mA
Total power dissipation 1) BAT 17W ,
T
A
97 C
P
tot
150
mW
BAT 17-04W, -05W, -06W ,
T
S
92 C
P
tot
150
Junction temperature
T
j
150
C
Operating temperature range
T
op
- 55 ...+150
Storage temperature
T
stg
- 55 ...+150
Thermal Resistance
Junction - ambient
1)
BAT 17W
R
thJA
435
K/W
Junction - ambient
1)
BAS 17-04W ...
R
thJA
550
Junction - soldering point BAT 17W
R
thJS
355
Junction - soldering point BAT 17-04W ...
R
thJS
390
1) Package mounted on alumina 15mm x 17.6mm x 0.7mm)
Semiconductor Group
1
1998-11-01
BAT 17W
Semiconductor Group
Sep-04-1998
2
Electrical Characteristics at
T
A
= 25 C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Breakdown voltage
I
(BR)
= 10 A
V
(BR)
4
-
-
V
Reverse current
V
R
= 3 V
V
R
= 4 V
I
R
-
-
-
-
0.25
10
A
Reverse current
V
R
= 3 V,
T
A
= 60 C
I
R
-
-
1.25
nA
Forward voltage
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
V
F
200
250
350
275
340
425
350
450
600
mV
AC characteristics
Diode capacitance
V
R
= 1 V,
f = 1 MHz
C
T
0.4
0.55
0.75
pF
Differential forward resistance
I
F
= 5 mA,
f = 100 kHz
r
f
-
8
15
Semiconductor Group
2
1998-11-01
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