BAS 70-04S
Semiconductor Group
Sep-07-1998
1
Silicon Schottky Diode Array
General-purpose diode for high-speed switching
Circuit protection
Voltage clamping
High-level detecting and mixing
VPS05604
6
3
1
5
4
2
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking Ordering Code
Package
Pin Configuration
74s
Q62702-A3468
1/4=A1
2/5=C2
3/6=C1/A2 SOT-363
BAS 70-04S
Maximum Ratings
Value
Unit
Parameter
Symbol
Diode reverse voltage
V
70
V
R
70
Forward current
mA
I
F
Surge forward current (t
<
100
s)
100
I
FSM
Total power dissipation,
T
S
97C
P
tot
mW
250
150
C
Junction temperature
T
j
Operating temperature range
-55...+150
T
op
T
stg
-55...+150
Storage temperature
Thermal Resistance
Junction - ambient
1)
R
thJA
K/W
445
R
thJS
210
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group
1
1998-11-01
BAS 70-04S
Semiconductor Group
Sep-07-1998
2
Electrical Characteristics at
T
A
= 25C, unless otherwise specified
Parameter
Symbol
Unit
Values
typ.
max.
min.
DC characteristics
V
-
V
(BR)
-
70
Breakdown voltage
I
(BR)
= 10 A
A
0.1
10
-
-
-
-
I
R
Reverse current
V
R
= 50 V
V
R
= 70 V
mV
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 15 mA
300
600
750
375
705
880
V
F
410
750
1000
AC characteristics
2
pF
Diode capacitance
V
R
= 0 V,
f = 1 MHz
1.6
C
T
-
100
Charge carrier life time
I
F
= 25 mA
ps
-
-
-
Forward resistance
I
F
= 10 mA,
f = 10 kHz
-
r
f
30
Semiconductor Group
2
1998-11-01
BAS 70-04S
Semiconductor Group
Sep-07-1998
4
Forward current
I
F
=
f (T
A
*;
T
S
)
* Package mounted on epoxy
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
10
20
30
40
50
60
70
80
mA
100
I
F
T
S
T
A
Permissible Pulse Load
R
thJS
=
f(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
I
Fmax
/
I
FDC
=
f(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
-
I
Fmax
/
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group
4
1998-11-01
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