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Электронный компонент: Q62702-A3470

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BAT 64-07W
Semiconductor Group
Sep-07-1998
1
Silicon Schottky Diodes
For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
Integrated diffused guard ring
Low forward voltage
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Package
Pin Configuration
4 = A1
BAT 64-07W
67s
Q62702-A3470
1 = C1 2 = C2
SOT-343
3 = A2
Maximum Ratings
Value
Unit
Parameter
Symbol
Diode reverse voltage
V
40
V
R
250
Forward current
mA
I
F
120
Average forward current (50/60Hz, sinus)
I
FAV
Surge forward current (t
<
100
s)
I
FSM
800
250
mW
Total power dissipation,
T
S
104 C
P
tot
C
T
j
Junction temperature
150
Storage temperature
T
stg
-55...+150
Thermal Resistance
Junction - ambient
1)
455
K/W
R
thJA
R
thJS
185
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Semiconductor Group
1
1998-11-01
BAT 64-07W
Semiconductor Group
Sep-07-1998
2
Electrical Characteristics at
T
A
= 25 C, unless otherwise specified.
Unit
Values
Symbol
Parameter
typ.
max.
min.
DC characteristics
2
-
I
R
Reverse current
V
R
= 30 V
A
-
200
Reverse current
V
R
= 30 V,
T
A
= 85 C
I
R
-
-
350
430
520
750
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
-
-
-
-
V
F
mV
320
385
440
570
AC characteristics
pF
Diode capacitance
V
R
= 1 V,
f = 1 MHz
-
4
C
T
6
Forward current
I
F
=
f (V
F
)
T
A
= Parameter
10
10
10
0
0.5
1
BAT 64...
EHB00057
V
F
F
V
10
10
2
1
0
-1
-2
mA
A
T = -40
25
85
125
C
C
C
C
Reverse current
I
R
=
f (V
R
)
T
A
= Parameter
10
10
10
0
10
20
30
BAT 64...
EHB00058
V
R
R
V
10
A
10
10
A
T = 125
85
25
2
1
0
-1
-2
-3
C
C
C
Semiconductor Group
2
1998-11-01
BAT 64-07W
Semiconductor Group
Sep-07-1998
3
Forward current
I
F
=
f (T
A
*;
T
S
)
* Package mounted on epoxy
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
50
100
150
200
mA
300

I
F
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
50
100
150
200
mA
300

I
F
T
S
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
50
100
150
200
mA
300

I
F
T
A
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
50
100
150
200
mA
300

I
F
Permissible Pulse Load
R
THJS
=
f(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W

R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
I
Fmax
/
I
FDC
=
f(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
-

I
Fmax
/
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group
3
1998-11-01