Semiconductor Group
1
BA 885
Silicon PIN Diode
BA 885
q
Current-controlled RF resistor
for switching and attenuating applications
q
Frequency range 1 MHz ... 2 GHz
q
Especially useful as antenna switch
in TV-sat tuners
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BA 885
Q62702-A608
PA
SOT-23
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
50
V
Forward current
I
F
50
mA
Operating temperature range
T
op
55 ... + 125
C
Storage temperature range
T
stg
55 ... + 150
Thermal Resistance
Junction - ambient
2)
R
th JA
450
K/W
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm
16.7 mm
0.7 mm.
07.94
Semiconductor Group
2
BA 885
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Parameter
Symbol
min.
typ.
Unit
Values
max.
Forward voltage
I
F
= 50 mA
V
F
V
1.1
Reverse current
V
R
= 30 V
I
R
nA
50
Diode capacitance
V
R
= 10 V,
f
= 1 MHz
V
R
= 0 V,
f
= 100 MHz
C
T
pF
0.28
0.23
0.6
0.4
Forward resistance
f
= 100 MHz
I
F
= 1.5 mA
I
F
= 10 mA
r
f
22
5
40
7
Zero bias conductance
V
R
= 0 V,
f
= 100 MHz
g
p
S
70
Series inductance
L
S
nH
2
Diode capacitance
C
T
=
f
(
V
R
)
f
= 1 MHz / 100 MHz
Forward resistance
r
f
=
f
(
I
F
)
f
= 100 MHz
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