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Электронный компонент: Q62702-A730

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Semiconductor Group
1
Silicon Schottky Diodes
BAS 70 ...
q
General-purpose diodes for high-speed switching
q
Circuit protection
q
Voltage clamping
q
High-level detecting and mixing
Available with CECC quality assessment
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BAS 70
Q62702-A118
73s
SOT-23
BAS 70-04
Q62702-A730
74s
BAS 70-05
Q62702-A711
75s
BAS 70-06
Q62702-A774
76s
1)
For detailed information see chapter Package Outlines.
01.97
Semiconductor Group
2
BAS 70 ...
q
General-purpose diodes for high-speed switching
q
Circuit protection
q
Voltage clamping
q
High-level detecting and mixing
Available with CECC quality assessment
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Maximum Ratings per Diode
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
SOT-143
BAS 70-07
Q62702-A846
77s
Thermal Resistance
Junction - ambient
3)
BAS 70
BAS 70-04 ...
R
th JA
405
575
K/W
Junction - soldering point
BAS 70
BAS 70-04 ...
R
th JS
335
435
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
70
V
Forward current
I
F
70
mA
Junction temperature
T
j
150
C
Storage temperature range
T
stg
55 ... + 150
Total power dissipation
BAS 70
T
S
66 C
2)
BAS 70-04 ...
T
S
40 C
2)
P
tot
250
mW
Operating temperature range
T
op
55 ... + 150
Surge forward current,
t
10 ms
I
FSM
100
1)
For detailed information see chapter Package Outlines.
2)
Max. 450 mW per package.
3)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
Semiconductor Group
3
BAS 70 ...
Electrical Characteristics per Diode
at
T
A
= 25 C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
V
Breakdown voltage
I
R
= 10
A
V
(BR)
70
A
Reverse current
V
R
= 50 V
V
R
= 70 V
I
R


0.1
10
mV
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 15 mA
V
F


375
705
880
410
750
1000
Differential forward resistance
I
F
= 10 mA,
f
= 10 kHz
r
f
30
pF
Diode capacitance
V
R
= 0,
f
= 1 MHz
C
T
1.6
2
ps
Charge carrier life time
I
F
= 25 mA
100
DC characteristics
Semiconductor Group
4
BAS 70 ...
Forward current
I
F
=
f
(
V
F
)
Diode capacitance
C
T
=
f
(
V
R
)
f
= 1 MHz
Characteristics per Diode at
T
j
= 25 C, unless otherwise specified.
Reverse current
I
R
=
f
(
V
R
)
Differential forward resistance
r
f
=
f
(
I
F
)
f
= 10 kHz
Semiconductor Group
5
BAS 70 ...
Forward current
I
F
=
f
(
T
A
*;
T
S
)
* Package mounted on epoxy