Semiconductor Group
1
Maximum Ratings per Diode
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BAW 79 A
BAW 79 B
BAW 79 C
BAW 79 D
Q62702-A781
Q62702-A782
Q62702-A771
Q62702-A733
GE
GF
GG
GH
SOT-89
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
50
V
Forward current
I
F
1
A
Junction temperature
T
j
150
C
Total power dissipation
T
S
= 115 C
P
tot
1
W
Storage temperature range
T
stg
65 ... + 150
Peak reverse voltage
V
RM
50
Surge forward current
t
= 1
s
I
FS
10
Peak forward current
I
FM
1
Thermal Resistance
Junction - ambient
2)
R
th JA
175
K/W
BAW
BAW
BAW
BAW
100
100
200
200
400
400
Junction - soldering point
R
th JS
35
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
q
For high-speed switching
q
High breakdown voltage
q
Common cathode
Silicon Switching Diodes
BAW 79 A
... BAW 79 D
5.91
BAW 79 A
... BAW 79 D
Semiconductor Group
2
Electrical Characteristics per Diode
at
T
A
= 25 C, unless otherwise specified.
Test circuit for reverse recovery time
Pulse generator:
t
p
=
5
s,
D
= 0.05
Oscillograph:
R
= 50
t
r
= 0.6 ns,
R
j
= 50
t
r
= 0.35 ns
C
1 pF
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
V
Breakdown voltage
I
(BR)
= 100
A
BAW 79 A
BAW 79 B
BAW 79 C
BAW 79 D
V
(BR)
50
100
200
400
A
Reverse current
V
R
=
V
Rmax
V
R
=
V
Rmax
,
T
A
= 150 C
I
R
1
50
AC characteristics
s
Reverse recovery time
I
F
= 200 mA,
I
R
= 200 mA,
R
L
= 100
measured at
I
R
= 20 mA
t
rr
1
V
Forward voltage
1)
I
F
= 1 A
I
F
= 2 A
V
F
1.6
2
pF
Diode capacitance
V
R
= 0 V,
f
= 1 MHz
C
D
10
1)
Pulse test:
t
p
300
s,
D
= 2 %.
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