Semiconductor Group
1
Silicon PIN Diodes
BAR 14-1
... BAR 16-1
Maximum Ratings per Diode
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BAR 14-1
Q62702-A772
L7
SOT-23
BAR 15-1
Q62702-A731
L8
BAR 16-1
Q62702-A773
L9
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
100
V
Total power dissipation,
T
S
65 C
2)
P
tot
250
mW
T
j
150
C
Forward current
I
F
140
mA
Junction temperature
Storage temperature range
T
op
55 ... + 150
T
stg
55 ... + 150
Thermal Resistance
Junction - ambient
2)
R
th JA
500
K/W
Junction - soldering point
R
th JS
340
Operating temperature range
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm
16.7 mm
0.7 mm.
q
RF switch
q
RF attenuator for frequencies above 10 MHz
q
Low distortion factor
q
Long-term stability of electrical characteristics
07.94
Semiconductor Group
2
BAR 14-1
... BAR 16-1
BAR 14-1
Electrical Characteristics per Diode
at
T
A
= 25 C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
V
Forward voltage
I
F
= 100 mA
V
F
1.05
s
Charge carrier life time
I
F
= 10 mA,
I
R
= 6 mA
L
0.7
1
nA
A
Reverse current
V
R
= 50 V
V
R
= 100 V
I
R
100
1
S
Zero bias conductance
V
R
= 0,
f
= 100 MHz
g
p
50
pF
Diode capacitance
V
R
= 50 V,
f
= 1 MHz
V
R
= 0,
f
= 100 MHz
C
T
0.25
0.2
0.5
Forward resistance
f
= 100 MHz,
I
F
= 0.01 mA
I
F
= 0.10 mA
I
F
= 1 mA
I
F
= 10 mA
r
f
2800
380
45
7
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