Semiconductor Group
1
03.96
Type
Ordering Code
Pin Configuration Marking
Package
(tape and reel)
1
2
3
BAT 17
BAT 17-04
BAT 17-05
BAT 17-06
Q62702-A504
Q62702-A775
Q62702-A776
Q62702-A777
A
A
A
C
C
A
C
C
C/A
C/C
A/A
53
54
55
56
SOT-23
Maximum Ratings
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
4
V
Forward current
I
F
130
mA
Total power dissipation
T
S
60
C
P
tot
150
mW
Junction temperature
T
j
150
C
Operating temperature range
T
op
55 ... + 150
C
Storage temperature range
T
stg
55 ... + 150
C
Thermal Resistance
Junction-ambient
1)
R
th JA
750
K/W
Junction-soldering point
R
th JS
590
K/W
1) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1cm
2
Cu.
Silicon Schottky Diode
BAT 17...
q
For mixer applications in the VHF/UHF range
q
For high-speed switching
BAT 17...
Semiconductor Group
2
Electrical Characteristics
at
T
A
= 25
C, unless otherwise specified.
Parameter
Symbol
Value
Unit
min.
typ.
max.
DC Characteristics
Breakdown voltage
I
R
= 10
A
V
(BR)
4
V
Reverse current
V
R
= 3 V
V
R
= 3 V,
T
A
= 60
C
V
R
= 4 V
I
R
0.25
1.25
10
A
Forward voltage
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
V
F
200
250
350
275
340
425
350
450
600
mV
Diode capacitance
V
R
= 0 V
f
= 1 MHz
C
T
0.4
0.55
0.75
pF
Differential forward resistance
I
F
= 5 mA,
f
= 10 kHz
r
S
8
15
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