Silicon Schottky Diode
BAT 32
q
RF detector
q
Low-power mixer
q
Zero bias
q
Very low capacitance
q
For frequencies up to 18 GHz
q
HiRel/Mil-tested diodes available
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Maximum Ratings
Type
Ordering Code
(tape and reel)
Frequency
band (GHz)
Package
1)
Pin Configuration
BAT 32
Q62702-A826
... 18 (X, Ku)
Cerec-X
Marking
32
Parameter
Symbol
Values
Unit
Forward current
I
F
50
mA
Junction temperature
T
j
150
Storage temperature range
T
stg
55 ... + 150
C
Operating temperature range
T
op
55 ... + 150
Reverse voltage
V
R
6.5
V
1)
For detailed information see chapter Package Outlines.
BAT 32
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
V
F
0.2
0.6
Diode capacitance
V
R
= 0.15 V,
f
= 1 MHz
C
T
pF
0.20
0.24
Parameter
Symbol
min.
typ.
Unit
Values
max.
Differential resistance
V
F
= 0,
f
= 10 kHz
Ro
k
15
Breakdown voltage
I
R
= 1 mA
V
(BR)
V
6.5
Forward current
I
F
=
f
(
V
F
)
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