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Электронный компонент: Q62702-A911

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Semiconductor Group
1
Silicon Switching Diodes
BAS 78 A
... BAS 78 D
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BAS 78 A
BAS 78 B
BAS 78 C
BAS 78 D
Q62702-A910
Q62702-A911
Q62702-A912
Q62702-A913
BAS 78 A
BAS 78 B
BAS 78 C
BAS 78 D
SOT-223
Parameter
Symbol
Values
BAS
BAS
BAS
BAS
78 A
78 B
78 C
78 D
Unit
Reverse voltage
V
R
V
Peak forward current
I
FM
Forward current
I
F
A
Junction temperature
T
j
C
Total power dissipation,
T
S
=
124 C
2)
P
tot
W
Storage temperature range
T
stg
Peak reverse voltage
V
RM
Thermal Resistance
Junction - ambient
2)
R
th JA
K/W
50
100
200
400
1
1
1.2
150
65 ... + 150
50
100
200
400
Surge forward current,
t
= 1
s
I
FS
10
92
Junction - soldering point
R
th JS
22
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
q
Switching applications
q
High breakdown voltage
5.91
Semiconductor Group
2
BAS 78 A
... BAS 78 D
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Test circuit for reverse recovery time
Pulse generator:
t
p
= 5
s,
D
= 0.05
Oscillograph:
R
= 50
t
r
= 0.6 ns,
R
j
= 50
t
r
= 0.35 ns
V
p
=
V
R
+
I
F
R
j
C
1 pF
V
Breakdown voltage
I
(BR)
= 100
A
BAS 78 A
BAS 78 B
BAS 78 C
BAS 78 D
V
(BR)
50
100
200
400






Forward voltage
1)
I
F
= 1 A
I
F
= 2 A
V
F


1.6
2
A
Reverse current
V
R
=
V
R max
V
R
=
V
R max,
T
A
= 150 C
I
R


1
50
pF
Diode capacitance
V
R
= 0,
f
= 1 MHz
C
D
10
s
Reverse recovery time
I
F
= 200 mA,
I
R
= 200 mA,
R
L
= 100
measured at
I
R
= 20 mA
t
rr
1
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
AC characteristics
1)
Pulse test conditions:
t
300
s,
D
= 2 %.
Semiconductor Group
3
BAS 78 A
... BAS 78 D
Forward current
I
F
=
f
(
T
A
*;
T
S
)
* Package mounted on epoxy
Reverse current
I
R
=
f
(
T
A
)
V
CE
= 10 V
Forward current
I
F
=
f
(
V
F
)
T
A
= 25 C