Semiconductor Group
1
Silicon Low Leakage Diode Array
BAV 199
Maximum Ratings per Diode
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BAV 199
Q62702-A921
JYs
SOT-23
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
70
V
Forward current
I
F
200
mA
Junction temperature
T
j
150
C
Total power dissipation,
T
S
= 31 C
P
tot
330
mW
Storage temperature range
T
stg
65 ... + 150
Peak reverse voltage
V
RM
70
Surge forward current,
t
= 1
s
I
FS
4.5
A
Thermal Resistance
Junction - ambient
2)
R
th JA
500
K/W
Junction - soldering point
R
th JS
360
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
q
Low-leakage applications
q
Medium speed switching times
q
Connected in series
5.91
Semiconductor Group
2
BAV 199
Electrical Characteristics per Diode
at
T
A
= 25 C, unless otherwise specified.
Test circuit for reverse recovery time
Pulse generator:
t
p
= 5
s,
D
= 0.05
Oscillograph:
R
= 50
t
r
= 0.6 ns,
R
j
= 50
t
r
= 0.35 ns
C
1 pF
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
V
Breakdown voltage
I
(BR)
= 100
A
V
(BR)
70
nA
Reverse current
V
R
= 70 V
V
R
= 70 V,
T
A
= 150 C
I
R
5
80
AC characteristics
s
Reverse recovery time
I
F
= 10 mA,
I
R
= 10 mA,
R
L
= 100
measured at
I
R
= 1 mA
t
rr
0.5
3
mV
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
V
F
900
1000
1100
1250
pF
Diode capacitance
V
R
= 0 V,
f
= 1 MHz
C
D
2
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