BA 586
Silicon PIN Diode
BA 586
Preliminary Data
q
Current-controlled RF resistor for
switching and attenuating applications.
q
Frequency range above 1 MHz
q
Designed for low IM distortion
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BA 586
Q62702-A930
white P
SOD-123
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
50
V
Forward current
I
F
50
mA
Operating temperature range
T
op
55 ... + 125
C
Storage temperature range
T
stg
55 ... + 150
Thermal Resistance
Junction - ambient
R
th JA
450
K/W
1)
For detailed information see chapter Package Outlines.
BA 586
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Parameter
Symbol
min.
typ.
Unit
Values
max.
Forward voltage
I
F
= 50 mA
V
F
V
1.15
Reverse current
V
R
= 50 V
I
R
nA
50
Diode capacitance
f
= 1 MHz
, V
R
= 50 V
f
= 100 MHz
, V
R
= 0 V
C
T
pF
0.23
0.2
0.35
Forward resistance
f
= 100 MHz
I
F
= 10
A
I
F
= 1 mA
I
F
= 10 mA
r
f
6.5
2400
58
7.8
10
Zero bias conductance
f
= 100 MHz,
V
R
= 0 V
g
p
S
40
Series inductance
L
S
nH
2
Diode capacitance
C
T
=
f
(
V
R
)
f
= 1 MHz /
f
= 100 MHz
Forward resistance
r
f
=
f
(
I
F
)
f
= 100 MHz
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