Semiconductor Group
1
BAT 18
Silicon RF Switching Diode
BAT 18 ...
q
Low-loss VHF/UHF switch above 10 MHz
q
Pin diode with low forward resistance
Maximum Ratings per Diode
Type
Ordering Code
Marking
Package
1)
Pin Configuration
BAT 18
Q62702-A787
A2
SOT 23
BAT 18-04
Q62702-A938
AU
BAT 18-05
Q62702-A940
AS
BAT 18-06
Q62702-A942
AT
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
35
V
Forward current
I
F
100
mA
Operating and
storage temperature range
T
op
T
stg
55 ... + 150
C
Thermal Resistance
Junction - ambient
R
th JA
450
K/W
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm
16.7 mm
0.7 mm.
07.94
Semiconductor Group
2
BAT 18...
Electrical Characteristics per Diode
at
T
A
= 25 C, unless otherwise specified.
Parameter
Symbol
min.
typ.
Unit
Values
max.
Forward voltage
I
F
= 100 mA
V
F
V
0.38
1.2
Reverse current
V
R
= 20 V
V
R
= 20 V,
T
A
= 60 C
I
R
nA
20
200
Diode capacitance
V
R
= 20
V, f
= 1 MHz
C
T
pF
0.75
1
Forward resistance
I
F
= 5 mA
, f
= 100 MHz
r
f
0.4
0.7
Series inductance
L
S
nH
2
Diode capacitance
C
T
=
f
(
V
R
)
f
= 1 MHz
Forward resistance
r
f
=
f
(
I
F
)
f
= 100 MHz
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