Semiconductor Group
1
Jun-27-1996
BAT 64-07
Silicon Schottky Diodes
Preliminary data
For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
Integrated diffused guard ring
Low forward voltage
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type
Marking Ordering Code
Pin Configuration
Package
BAT 64-07
67s
Q62702-A964
1 = C1 2 = C2 3 = A2 4 = A1 SOT-143
Maximum Ratings
Parameter
Symbol
Values
Unit
Diode reverse voltage
V
R
40
V
Forward current
I
F
250
mA
Average forward current (50/60Hz, sinus)
I
FAV
120
Surge forward current (
t
10
ms)
I
FSM
800
Total Power dissipation
T
S
= 61 C
P
tot
250
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
- 55 ... + 150
Thermal Resistance
Junction ambient
1)
R
thJA
495
K/W
Junction - soldering point
R
thJS
355
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm
2
Cu
Semiconductor Group
2
Jun-27-1996
BAT 64-07
Electrical Characteristics at
T
A
=25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 25 V,
T
A
= 25 C
V
R
= 25 V,
T
A
= 85 C
I
R
-
-
-
-
200
2
A
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
V
F
-
-
-
-
570
440
385
320
750
520
430
350
mV
V
AC Characteristics
Diode capacitance
V
R
= 1 V,
f = 1 MHz
C
T
-
4
6
pF
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