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Электронный компонент: Q62702-A971

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Semiconductor Group
1
Silicon Schottky Diode
BAT 62
q
Low barrier diode for detectors up to GHz
frequencies.
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Maximum Ratings per Diode
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
SOT-143
BAT 62
Q62702-A971
62
Thermal Resistance
Junction - ambient
2)
R
th JA
810
K/W
Junction - soldering point
R
th JS
650
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
40
V
Forward current
I
F
20
mA
Junction temperature
T
j
150
C
Storage temperature range
T
stg
55 ... + 150
Total power dissipation,
T
S
85 C
P
tot
100
mW
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm
16.7 mm
0.7 mm.
02.96
Semiconductor Group
2
BAT 62
Electrical Characteristics per Diode
at
T
A
= 25 C, unless otherwise specified.
Parameter
Symbol
min.
typ.
Unit
Values
max.
Forward voltage
I
F
= 2 mA
V
F
V
0.58
1
Diode capacitance
V
R
= 0,
f
= 1 MHz
C
T
pF
0.35
0.6
Case capacitance
C
C
0.1
Differential resistance
V
R
= 0,
f
= 10 kHz
R
0
k
225
Series inductance
L
S
nH
2
Reverse current
V
R
= 40 V
I
R
A
10
Forward current
I
F
=
f
(
V
F
)
Forward current
I
F
=
f
(
T
S
; T
A
*)
*Package mounted on alumina
Semiconductor Group
3
BAT 62
Reverse current
I
R
=
f
(
V
R
)
f
= 1 MHz
Rectifier voltage
V
0
=
f
(
V
i
)
f
= 900 MHz
Diode capacitance
C
T
=
f
(
V
R
)
f
= 1 MHz