Semiconductor Group
1
Silicon Schottky Diode
BAT 66-05
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BAT 66-05
Q62702-A988
BAT 66-05
SOT-223
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
40
V
Forward current
I
F
2
A
Junction temperature
T
j
150
C
Total power dissipation,
T
S
126 C
P
tot
1.2
W
Storage temperature range
T
stg
55 ... + 150
Surge forward current,
t
10 ms
I
FSM
10
Average forward current, 50 Hz
I
FAV
1
Thermal Resistance
Junction - ambient
2)
R
th JA
160
K/W
Junction - soldering point
R
th JS
20
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
Preliminary Data
q
Low-power Schottky rectifier diode
q
For low-loss, fast-recovery rectification, meter
protection, bias isolation and clamping purposes
5.91
Semiconductor Group
2
BAT 66-05
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
A
mA
Reverse current
V
R
= 25 V
V
R
= 25 V,
T
A
= 85 C
I
R
10
1
V
Forward voltage
I
F
= 10 mA
I
F
= 100 mA
I
F
= 1 A
V
F
0.28
0.35
0.47
0.35
0.60
pF
Diode capacitance
V
R
= 10 V,
f
= 1 MHz
C
T
30
40
Forward current
I
F
=
f
(
V
F
)
Reverse current
I
R
=
f
(
V
R
)
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