Semiconductor Group
1
Sep-11-1996
BBY 53-03W
Silicon Tuning Diode
Preliminary data
High Q hyperabrupt tuning diode
Designed for low tuning voltage operation
for VCO's in mobile communications equipment
High ratio at low reverse voltage
Type
Marking Ordering Code
Pin Configuration
Package
BBY 53-03W
white/5
Q62702-B0825
1 = C
2 = A
SOD-323
Maximum Ratings
Parameter
Symbol
Values
Unit
Diode reverse voltage
V
R
6
V
Forward current
I
F
20
mA
Operating temperature range
T
op
- 55 ... + 150
C
Storage temperature
T
stg
- 55 ... + 150
Semiconductor Group
2
Sep-11-1996
BBY 53-03W
Electrical Characteristics at
T
A
=25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 4 V,
T
A
= 25 C
V
R
= 4 V,
T
A
= 65 C
I
R
-
-
-
-
200
10
nA
AC characteristics
Diode capacitance
V
R
= 1 V,
f = 1 MHz
V
R
= 3 V,
f = 1 MHz
C
T
1.85
4.8
2.4
5.3
3.1
5.8
pF
Capacitance ratio
V
R
= 1 V,
V
R
= 3 V,
f = 1 MHz
C
T1
/
C
T3
1.8
2.2
2.6
-
Series resistance
V
R
= 1 V,
f = 1 GHz
r
s
-
0.37
-
Case capacitance
f = 1 MHz
C
C
-
0.12
-
pF
Series inductance chip to ground
L
s
-
2
-
nH
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