BB 669
Semiconductor Group
Jul-10-1998
1
Silicon Tuning Diode
Preliminary data
For VHF 2-Band-hyperband-TV-tuners
Very high capacitance ratio
Low series resistance
Extremely small plastic SMD package
Excellent uniformity and matching due to
"in-line" matching assembly procedure
VPS05176
1
2
Type
Marking Ordering Code
Pin Configuration Package
BB 669
1
Q62702-B0839
1 = C
2 = A
SOD-323
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
V
R
30
V
RM
35
Peak reverse voltage (
R
5k
)
Forward current
I
F
20
mA
Operating temperature range
T
op
- 55 ...+150
C
Storage temperature
T
stg
- 55 ...+150
Semiconductor Group
1
1998-11-01
BB 669
Semiconductor Group
Jul-10-1998
2
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 30 V
I
R
-
-
10
nA
Reverse current
V
R
= 30 V,
T
A
= 85 C
I
R
-
-
200
AC characteristics
pF
Diode capacitance
V
R
= 1 V,
f = 1 MHz
V
R
= 2 V,
f = 1 MHz
V
R
= 25 V,
f = 1 MHz
V
R
= 28 V,
f = 1 MHz
56.5
43.4
2.8
2.7
61.5
47.2
3
2.9
51
39.6
2.6
2.5
C
T
-
Capacitance ratio
V
R
= 2 V,
V
R
= 25 V,
f = 1 MHz
C
T2
/
C
T25
17
15.5
14.5
C
T1
/
C
T28
Capacitance ratio
V
R
= 1 V,
V
R
= 28 V,
f = 1 MHz
20.9
23.3
18
%
C
T
/
C
T
-
Capacitance ratio
1)
V
R
= 1 V,
V
R
= 28 V,
f = 1 MHz
-
2
Series resistance
V
R
= 8 V,
f = 470 MHz
0.85
-
-
r
s
nH
Series inductance
L
s
-
1.4
-
1) In-line matching. For details please refer to Application Note 047
Semiconductor Group
2
1998-11-01
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