BB 659
Semiconductor Group
Jul-28-1998
1
Silicon Tuning Diode
For VHF-TV-tuners
High capacitance ratio
Low series inductance
Low series resistance
Extremely small plastic SMD package
Excellent uniformity and matching due to
"in-line" matching assembly procedure
1
VES05991
2
Ordering Code
Pin Configuration Package
Marking
Type
BB 659
BB 659
D
D
Q62702-B0875 unmatched
Q62702-B0854 inline matched
1 = C
2 = A
SCD-80
Maximum Ratings
Symbol
Value
Parameter
Unit
Diode reverse voltage
V
30
V
R
V
RM
Peak reverse voltage (
R
5k
)
35
mA
20
I
F
Forward current
Operating temperature range
-55 ...+150
C
T
op
T
stg
-55 ...+150
Storage temperature
Semiconductor Group
1
1998-11-01
BB 659
Semiconductor Group
Jul-28-1998
2
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Values
Symbol
Unit
typ.
max.
min.
DC characteristics
10
nA
Reverse current
V
R
= 30 V
-
I
R
-
100
I
R
-
-
Reverse current
V
R
= 30 V,
T
A
= 85 C
AC characteristics
Diode capacitance
V
R
= 1 V,
f = 1 MHz
V
R
= 2 V,
f = 1 MHz
V
R
= 25 V,
f = 1 MHz
V
R
= 28 V,
f = 1 MHz
36
27.5
2.5
2.4
38.3
30.1
2.89
2.6
C
T
40
32
3.2
2.9
pF
-
10.4
Capacitance ratio
V
R
= 2 V,
V
R
= 25 V,
f = 1 MHz
C
T2
/
C
T25
9.8
-
Capacitance ratio
V
R
= 1 V,
V
R
= 28 V,
f = 1 MHz
C
T1
/
C
T28
13.5
14.7
-
Capacitance matching
1)
V
R
= 1V to 28V ,
f = 1 MHz, 4 diodes sequence
V
R
= 1V to 28V ,
f = 1 MHz, 7 diodes sequence
C
T
/
C
T
-
-
0.3
0.4
1
2
%
Series resistance
V
R
= 5 V,
f = 470 MHz
r
s
-
0.65
0.7
Series inductance
L
s
-
0.6
-
nH
1) In-line matching. For details please refer to Application Note 047
Semiconductor Group
2
1998-11-01
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